网站首頁   GB 中國國家標準檢索   GB標準關鍵詞   GB標準檢測及合規性分析 價格和支付方式 聯系我們
 

“Test method for sili ” 中國GB標準檢索結果

1. 已翻譯的GB標準英文版(有 SALE 標誌的),以及GB標準中文版,可以直接在網站上購買,在收到您付款後,會在1~3天內發您郵箱。
2. 其他未翻譯的GB標準英文版,在接到您翻譯訂單後,才進行翻譯,時間一般需要多3~5天。
       
GB/T 43493.3-2023
半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第3部分:缺陷的光致发光检测方法(中英文版)
Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 3: Photoluminescence detection method of defects
GB/T 43493.2-2023
半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第2部分:缺陷的光学检测方法(中英文版)
Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 2: Optical detection methods for defects
GB/T 1558-2023
硅中代位碳含量的红外吸收测试方法(中英文版)
Infrared absorption test method for substituted carbon content in silicon
GB/T 42789-2023
硅片表面光泽度的测试方法(中英文版)
Test method for silicon wafer surface gloss
GB/T 41605-2022
滚动轴承球用氮化硅材料 室温压痕断裂阻力试验方法 压痕法(中英文版)
Silicon nitride materials for rolling bearing balls - Test method for indentation fracture resistance at room temperature - Indentation method
GB/T 41490-2022
氮化硅陶瓷 室温下滚动接触疲劳试验方法 球板法(中英文版)
Test method for rolling contact fatigue of silicon nitride ceramics at room temperature ball plate method
GB/T 32280-2022
硅片翘曲度和弯曲度的测试? 自动非接触扫描法(中英文版)
Test method for warp and bow of silicon wafers—Automated non-contact scanning method
GB/T 24581-2022
硅单晶中III、V族杂质含量的测定 低温傅立叶变换红外光谱法(中英文版)
Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method
GB/T 41765-2022
碳化硅单晶位错密度的测试方法(中英文版)
Test method for dislocation density of silicon carbide single crystal
GB/T 41737-2022
铝基复合材料 碳化硅体积分数试验方法 溶解法(中英文版)
Aluminum matrix composites - Test method for volume fraction of silicon carbide - Dissolution method
GB/T 40279-2021
硅片表面薄膜厚度的测试 光学反射法(中英文版)
Test method for thickness of films on silicon wafer surface—Optical reflection method
GB/T 14146-2021
硅外延层载流子浓度的测试 电容-电压法(中英文版)
Test method for carrier concentration of silicon epitaxial layers - Capacitance-voltage method
GB/T 1551-2021
硅单晶电阻率的测定 直排四探针法和直流两探针法(中英文版)
Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
GB/T 39145-2020
硅片表面金属元素含量的测定 电感耦合等离子体质谱法(中英文版)
Test method for the content of surface metal elements on silicon wafers—Inductively coupled plasma mass spectrometry
GB/T 38976-2020
硅材料中氧含量的测试 惰性气体熔融红外法(中英文版)
Test method for the oxygen concentration in silicon materials—Inert gas fusion infrared detection method
GB/T 12442-2019
石英玻璃中羟基含量检验方法(中英文版)
Test method for the hydroxyl groups content of silica glass
GB/T 37385-2019
硅中氯离子含量的测定 离子色谱法(中英文版)
Test method for chloride content of silicon—Ion chromatography method
GB/T 37240-2018
晶体硅光伏组件盖板玻璃透光性能测试评价方法(中英文版)
Test and evaluation methods for light transmission property of cover glass for crystalline silicon photovoltaic module
GB/T 19921-2018
硅抛光片表面颗粒测试方法(中英文版)
Test method for particles on polished silicon wafer surfaces
GB/T 37049-2018
电子级多晶硅中基体金属杂质含量的测定-电感耦合等离子体质谱法(中英文版)
Test method for the content of metal impurity in electronic grade polysilicon—Inductively coupled-plasma mass spectrometry method
GB/T 37213-2018
硅晶锭尺寸的测定-激光法(中英文版)
Test method for silicon brick dimension—Laser technology method
GB/T 4059-2018
硅多晶气氛区熔基磷检验方法(中英文版)
Test method for phosphorus content in polycrystalline silicon by zone-melting method under controlled atmosphere
GB/T 26068-2018
硅片和硅锭载流子复合寿命的测试-非接触微波反射光电导衰减法(中英文版)
Test method for carrier recombination lifetime in silicon wafers and silicon ingots—Non-contact measurement of photoconductivity decay by microwave reflectance method
GB/T 36655-2018
电子封装用球形二氧化硅微粉中α态晶体二氧化硅含量的测试方法 XRD法(中英文版)
Test method for alpha crystalline silicon dioxide content of spherical silica powder for electronic packaging—XRD method
GB/T 4060-2018
硅多晶真空区熔基硼检验方法(中英文版)
Test method for boron content in polycrystalline silicon by vacuum zone-melting method
GB/T 1557-2018
硅晶体中间隙氧含量的红外吸收测量方法(中英文版)
Test method for determining interstitial oxygen content in silicon by infrared absorption
GB/T 34520.2-2017
连续碳化硅纤维测试方法 第2部分:单纤维直径(中英文版)
Test methods for continuous silicon carbide fiber—Part 2:Diameter of single-filament fiber
GB/T 34520.1-2017
连续碳化硅纤维测试方法 第1部分:束丝上浆率(中英文版)
Test methods for continuous silicon carbide fiber—Part 1:Size content of filament yarn
GB/T 34520.5-2017
连续碳化硅纤维测试方法 第5部分:单纤维拉伸性能(中英文版)
Test methods for continuous silicon carbide fiber—Part 5:Tensile properties of single-filament fiber
GB/T 34520.4-2017
连续碳化硅纤维测试方法 第4部分:束丝拉伸性能(中英文版)
Test methods for continuous silicon carbide fiber—Part 4:Tensile properties of filament yarn
GB/T 34709-2017
硅胶通用试验方法(中英文版)
General test method for silica gel
GB/T 34520.3-2017
连续碳化硅纤维测试方法 第3部分:线密度和密度(中英文版)
Test methods for continuous silicon carbide fiber—Part 3:Linear density and density
GB/T 34520.6-2017
连续碳化硅纤维测试方法 第6部分:电阻率(中英文版)
Test methods for continuous silicon carbide fiber-Part 6:Resistivity
GB/T 34520.7-2017
连续碳化硅纤维测试方法 第7部分:高温强度保留率(中英文版)
Test methods for continuous silicon carbide fiber—Part 7 :High temperature strength retention rate
GB/T 14142-2017
硅外延层晶体完整性检验方法 腐蚀法(中英文版)
Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique
GB/T 35306-2017
硅单晶中碳、氧含量的测定 低温傅立叶变换红外光谱法(中英文版)
Test method for carbon and oxygen content of single crystal silicon—Low temperature fourier transform infrared spectrometry
GB/T 35457-2017
弹性、纺织及层压铺地物 挥发性有机化合物(VOC)释放量的试验方法(中英文版)
Resilient,textile and laminate floor coverings—Test method for volatile organic compound(VOC)emissions
GB/T 32651-2016
采用高质量分辨率辉光放电质谱法测量太阳能级硅中痕量元素的测试方法(中英文版)
Test method for measuring trace elements in photovoltaic-grade silicon by high-mass resolution glow discharge mass spectrometry
GB/T 32281-2015
太阳能级硅片和硅料中氧、碳、硼和磷量的测定 二次离子质谱法(中英文版)
Test method for measuring oxygen, carbon, boron and phosphorus in solar silicon wafers and feedstock by secondary ion mass spectrometry
GB/T 32280-2015
硅片翘曲度测试 自动非接触扫描法(中英文版)
Test method for warp of silicon wafers—Automated non-contact scanning method
GB/T 32278-2015
碳化硅单晶片平整度测试方法(中英文版)
Test methods for flatness of monocrystalline silicon carbide wafers
GB/T 32277-2015
硅的仪器中子活化分析测试方法(中英文版)
Test method for instrumental neutron activation analysis (INAA) of silicon
GB/T 24578-2015
硅片表面金属沾污的全反射X光荧光光谱测试方法(中英文版)
Test method for measuring surface metal contamination on silicon wafers by total reflection X-Ray fluorescence spectroscopy
GB/T 31851-2015
硅酮结构密封胶中烷烃增塑剂检测方法(中英文版)
Test method for alkane plasticizer in structural silicone sealants
GB/T 31854-2015
光伏电池用硅材料中金属杂质含量的电感耦合等离子体质谱测量方法(中英文版)
Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry
GB/T 31351-2014
碳化硅单晶抛光片微管密度无损检测方法(中英文版)
Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers
GB/T 31225-2014
椭圆偏振仪测量硅表面上二氧化硅薄层厚度的方法(中英文版)
Test method for the thickness of silicon oxide on Si substrate by ellipsometer
GB/T 30860-2014
太阳能电池用硅片表面粗糙度及切割线痕测试方法(中英文版)
Test methods for surface roughness and saw mark of silicon wafers for solar cells
GB/T 30859-2014
太阳能电池用硅片翘曲度和波纹度测试方法(中英文版)
Test method for warp and waviness of silicon wafers for solar cells
GB/T 30869-2014
太阳能电池用硅片厚度及总厚度变化测试方法(中英文版)
Test method for thickness and total thickness variation of silicon wafers for solar cell

找到:89條目   |  [首頁]-[上一頁]-[下一頁]-[尾頁]  | 去到: 1 2

 

1F Zhongmao Building, No.1 Beizhan Road, Luohu District, Shenzhen City, China
+86-755-2583-1330       [email protected]
©  Copyright  2001-2025 All Rights Reserved