“Test method for sili ” 中國GB標準檢索結果

1. 已翻譯的GB標準英文版（有 SALE 標誌的），以及GB標準中文版，可以直接在網站上購買，在收到您付款後，會在1～3天內發您郵箱。
2. 其他未翻譯的GB標準英文版，在接到您翻譯訂單後，才進行翻譯，時間一般需要多3～5天。


	GB/T 43493.3-2023 （中英文版） Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 3: Photoluminescence detection method of defects
	GB/T 43493.2-2023 （中英文版） Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 2: Optical detection methods for defects
	GB/T 1558-2023 （中英文版） Infrared absorption test method for substituted carbon content in silicon
	GB/T 42789-2023 （中英文版） Test method for silicon wafer surface gloss
	GB/T 41605-2022 （中英文版） Silicon nitride materials for rolling bearing balls - Test method for indentation fracture resistance at room temperature - Indentation method
	GB/T 41490-2022 （中英文版） Test method for rolling contact fatigue of silicon nitride ceramics at room temperature ball plate method
	GB/T 32280-2022 （中英文版） Test method for warp and bow of silicon wafers—Automated non-contact scanning method
	GB/T 24581-2022 （中英文版） Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method
	GB/T 41765-2022 （中英文版） Test method for dislocation density of silicon carbide single crystal
	GB/T 41737-2022 （中英文版） Aluminum matrix composites - Test method for volume fraction of silicon carbide - Dissolution method
	GB/T 40279-2021 （中英文版） Test method for thickness of films on silicon wafer surface—Optical reflection method
	GB/T 14146-2021 （中英文版） Test method for carrier concentration of silicon epitaxial layers - Capacitance-voltage method
	GB/T 1551-2021 （中英文版） Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
	GB/T 39145-2020 （中英文版） Test method for the content of surface metal elements on silicon wafers—Inductively coupled plasma mass spectrometry
	GB/T 38976-2020 （中英文版） Test method for the oxygen concentration in silicon materials—Inert gas fusion infrared detection method
	GB/T 12442-2019 （中英文版） Test method for the hydroxyl groups content of silica glass
	GB/T 37385-2019 （中英文版） Test method for chloride content of silicon—Ion chromatography method
	GB/T 37240-2018 （中英文版） Test and evaluation methods for light transmission property of cover glass for crystalline silicon photovoltaic module
	GB/T 19921-2018 （中英文版） Test method for particles on polished silicon wafer surfaces
	GB/T 37049-2018 （中英文版） Test method for the content of metal impurity in electronic grade polysilicon—Inductively coupled-plasma mass spectrometry method
	GB/T 37213-2018 （中英文版） Test method for silicon brick dimension—Laser technology method
	GB/T 4059-2018 （中英文版） Test method for phosphorus content in polycrystalline silicon by zone-melting method under controlled atmosphere
	GB/T 26068-2018 （中英文版） Test method for carrier recombination lifetime in silicon wafers and silicon ingots—Non-contact measurement of photoconductivity decay by microwave reflectance method
	GB/T 36655-2018 （中英文版） Test method for alpha crystalline silicon dioxide content of spherical silica powder for electronic packaging—XRD method
	GB/T 4060-2018 （中英文版） Test method for boron content in polycrystalline silicon by vacuum zone-melting method
	GB/T 1557-2018 （中英文版） Test method for determining interstitial oxygen content in silicon by infrared absorption
	GB/T 34520.2-2017 （中英文版） Test methods for continuous silicon carbide fiber—Part 2：Diameter of single-filament fiber
	GB/T 34520.1-2017 （中英文版） Test methods for continuous silicon carbide fiber—Part 1：Size content of filament yarn
	GB/T 34520.5-2017 （中英文版） Test methods for continuous silicon carbide fiber—Part 5：Tensile properties of single-filament fiber
	GB/T 34520.4-2017 （中英文版） Test methods for continuous silicon carbide fiber—Part 4：Tensile properties of filament yarn

找到:89條目 | [首頁]-[上一頁]-[下一頁]-[尾頁] | 去到: 1 2 3