“Test method for sili ” 中國GB標準檢索結果 |
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1. 已翻譯的GB標準英文版（有 SALE
標誌的），以及GB標準中文版，可以直接在網站上購買，在收到您付款後，會在1～3天內發您郵箱。 2. 其他未翻譯的GB標準英文版，在接到您翻譯訂單後，才進行翻譯，時間一般需要多3～5天。 |
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JC/T 1060-2007 矽酸鹽建材製品中廢渣摻量測定方法（中英文版） Test methods for waste residue in silicate building material products |
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JC/T 808-2013 矽鋁質耐火澆注料耐鹼性試驗方法（中英文版） Test method for alkali-resistance of silica-alumina refractory castable |
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TB 1935-1987 信號設備用矽太陽電池電源系統電性能測試方法（中英文版） (Signaling Devices silicon solar electric power system performance test method) |
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TB 1934-1987 信號設備用矽太陽電池電性能測試方法（中英文版） (Signal silicon solar electrical equipment performance test method) |
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SJ 968-1975 矽開關二極體反向恢復時間的測試方法（中英文版） (Silicon Switching Diode Reverse Recovery Test Method for Time) |
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SJ 964-1975 矽開關二極體正向電流的測試方法（中英文版） (Silicon switching diode forward current testing methods) |
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SJ 963-1975 矽開關二極體正向壓降的測試方法（中英文版） (Test methods of silicon switching diode forward voltage drop) |
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SJ/T 2429-1983 （中英文版） Test method for electrical characteristics of astronautic monocrystal silicon solar cells |
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SJ/T 10481-1994 矽外延層電阻率的面接觸三探針測試方法（中英文版） Test method for resistivity of silicon epitaxial layers by area contacts three-probe techniques |
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SJ/T 10627-1995 通過測量間隙氧含量的減少表徵矽片氧沉澱特性的方法（中英文版） Test methods for oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction |
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SJ 20636-1997 ic用大直徑薄矽片的氧、碳含量微區試驗方法（中英文版） Test method for oxygen and carbon contents of large diameter thin silicon wafer in microzone for use in IC |
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SJ/T 11504-2015 碳化矽單晶拋光片表面品質的測試方法（中英文版） Test method for measuring surface quality of polished monocrystalline silicon carbide |
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SJ/T 11503-2015 碳化矽單晶拋光片表面粗糙度的測試方法（中英文版） Test methods for measuring surface roughness of polished monocrystalline silicon carbide wafers |
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SJ/T 11501-2015 碳化矽單晶晶型的測試方法（中英文版） Test method for determining crystal type of monocrystalline silicon carbide |
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SJ/T 11500-2015 碳化矽單晶晶向的測試方法（中英文版） Test method for measuring crystallographic orientation of monocrystalline silicon carbide |
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SJ/T 11499-2015 碳化矽單晶電學性能的測試方法（中英文版） Test method for measuring electrical properties of monocrystalline silicon carbide |
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SJ/T 11498-2015 重摻矽襯底中氧濃度的二次離子質譜測量方法（中英文版） Test method for measuring oxygen contamination in heavily doped silicon substrates by secondary ion mass spectrometry |
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SJ/T 11494-2015 矽單晶中iii-v族雜質的光致發光測試方法（中英文版） Test methods for photoluminescence analysis of single crystal silicon for III-V impurities |
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SJ/T 11493-2015 矽襯底中氮濃度的二次離子質譜測量方法（中英文版） Test method for measuring nitrogen concentration in silicon substrates by secondary ion mass spectrometry |
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SJ/T 11491-2015 短基線紅外吸收光譜法測量矽中間隙氧含量（中英文版） Test methods for measurement of interstitial oxygen content in silicon by short baseline infrared absorption spectrometry |
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YY/T 1471-2016 含銅宮內節育器用含吲哚美辛矽橡膠技術要求與試驗方法（中英文版） (IUDs containing copper indomethacin silicone rubber technical requirements and test methods for indole) |
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SN/T 4005-2013 傢俱多孔彈性材料燃燒試驗方法 重量損失法（中英文版） Test methods for testing the burning behaviour of resilient filling materials used in furniture, Loss in mass |
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SN/T 3612-2013 傢俱彈性填充材料燃燒試驗方法 垂直燃燒法（中英文版） Test methods for testing the burning behaviour of resilient filling materials used in upholstered furniture. Vertical method |
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GB/T 6621-2009 矽片表面平整度測試方法（中英文版） Testing methods for surface flatness of silicon slices |
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GB/T 6620-2009 矽片翹曲度非接觸式測試方法（中英文版） Test method for measuring warp on silicon slices by noncontact scanning |
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GB/T 6619-2009 矽片彎曲度測試方法（中英文版） Test methods for bow of silicon wafers |
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GB/T 6618-2009 矽片厚度和總厚度變化測試方法（中英文版） Test method for thickness and total thickness variation of silicon slices |
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GB/T 6617-2009 矽片電阻率測定 擴展電阻探針法（中英文版） Test method for measuring resistivity of silicon wafer using spreading resistance probe |
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GB/T 4058-2009 矽拋光片氧化誘生缺陷的檢驗方法（中英文版） Test method for detection of oxidation induced defects in polished silicon wafers |
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GB/T 32651-2016 採用高品質解析度輝光放電質譜法測量太陽能級矽中痕量元素的測試方法（中英文版） Test method for measuring trace elements in photovoltaic-grade silicon by high-mass resolution glow discharge mass spectrometry |
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