“Test method for sili ” 中國GB標準檢索結果 |
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GB/T 34709-2017 (中英文版) General test method for silica gel |
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GB/T 34520.3-2017 (中英文版) Test methods for continuous silicon carbide fiber—Part 3:Linear density and density |
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GB/T 34520.6-2017 (中英文版) Test methods for continuous silicon carbide fiber-Part 6:Resistivity |
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GB/T 34520.7-2017 (中英文版) Test methods for continuous silicon carbide fiber—Part 7 :High temperature strength retention rate |
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GB/T 14142-2017 (中英文版) Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique |
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GB/T 35306-2017 (中英文版) Test method for carbon and oxygen content of single crystal silicon—Low temperature fourier transform infrared spectrometry |
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GB/T 35457-2017 (中英文版) Resilient,textile and laminate floor coverings—Test method for volatile organic compound(VOC)emissions |
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GB/T 32651-2016 (中英文版) Test method for measuring trace elements in photovoltaic-grade silicon by high-mass resolution glow discharge mass spectrometry |
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GB/T 32281-2015 (中英文版) Test method for measuring oxygen, carbon, boron and phosphorus in solar silicon wafers and feedstock by secondary ion mass spectrometry |
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GB/T 32280-2015 (中英文版) Test method for warp of silicon wafers—Automated non-contact scanning method |
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GB/T 32278-2015 (中英文版) Test methods for flatness of monocrystalline silicon carbide wafers |
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GB/T 32277-2015 (中英文版) Test method for instrumental neutron activation analysis (INAA) of silicon |
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GB/T 24578-2015 (中英文版) Test method for measuring surface metal contamination on silicon wafers by total reflection X-Ray fluorescence spectroscopy |
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GB/T 31851-2015 (中英文版) Test method for alkane plasticizer in structural silicone sealants |
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GB/T 31854-2015 (中英文版) Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry |
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GB/T 31351-2014 (中英文版) Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers |
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GB/T 31225-2014 (中英文版) Test method for the thickness of silicon oxide on Si substrate by ellipsometer |
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GB/T 30860-2014 (中英文版) Test methods for surface roughness and saw mark of silicon wafers for solar cells |
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GB/T 30859-2014 (中英文版) Test method for warp and waviness of silicon wafers for solar cells |
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GB/T 30869-2014 (中英文版) Test method for thickness and total thickness variation of silicon wafers for solar cell |
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GB/T 30868-2014 (中英文版) Test method for measuring micropipe density of monocrystalline silicon carbide wafers―Chemically etching |
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GB/T 30867-2014 (中英文版) Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers |
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GB/T 30866-2014 (中英文版) Test method for measuring diameter of monocrystalline silicon carbide wafers |
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GB/T 30454-2013 (中英文版) Test methods of silicate phosphors activated by rare earths for LED |
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GB/T 29852-2013 (中英文版) Test method for measuring Phosphorus, Arsenic and Antimony in silicon materials used for photovoltaic applications by secondary ion mass spectrometry |
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GB/T 29851-2013 (中英文版) Test method for measuring Boron and Aulminium in silicon materials used for photovoltaic applications by secondary ion mass spectrometry |
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GB/T 29850-2013 (中英文版) Test method for measuring compensation degree of silicon materials used for photovoltaic applications |
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GB/T 29849-2013 (中英文版) Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry |
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GB/T 29507-2013 (中英文版) Test method for measuring flatness, thickness and total thickness variation on silicon wafers by automated non-contact scanning |
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GB/T 29505-2013 (中英文版) Test method for measuring surface roughness on planar surfaces of silicon wafer |
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