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“Test method for sili ” 中國GB標準檢索結果

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GB/T 34709-2017
(中英文版)
General test method for silica gel
GB/T 34520.3-2017
(中英文版)
Test methods for continuous silicon carbide fiber—Part 3:Linear density and density
GB/T 34520.6-2017
(中英文版)
Test methods for continuous silicon carbide fiber-Part 6:Resistivity
GB/T 34520.7-2017
(中英文版)
Test methods for continuous silicon carbide fiber—Part 7 :High temperature strength retention rate
GB/T 14142-2017
(中英文版)
Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique
GB/T 35306-2017
(中英文版)
Test method for carbon and oxygen content of single crystal silicon—Low temperature fourier transform infrared spectrometry
GB/T 35457-2017
(中英文版)
Resilient,textile and laminate floor coverings—Test method for volatile organic compound(VOC)emissions
GB/T 32651-2016
(中英文版)
Test method for measuring trace elements in photovoltaic-grade silicon by high-mass resolution glow discharge mass spectrometry
GB/T 32281-2015
(中英文版)
Test method for measuring oxygen, carbon, boron and phosphorus in solar silicon wafers and feedstock by secondary ion mass spectrometry
GB/T 32280-2015
(中英文版)
Test method for warp of silicon wafers—Automated non-contact scanning method
GB/T 32278-2015
(中英文版)
Test methods for flatness of monocrystalline silicon carbide wafers
GB/T 32277-2015
(中英文版)
Test method for instrumental neutron activation analysis (INAA) of silicon
GB/T 24578-2015
(中英文版)
Test method for measuring surface metal contamination on silicon wafers by total reflection X-Ray fluorescence spectroscopy
GB/T 31851-2015
(中英文版)
Test method for alkane plasticizer in structural silicone sealants
GB/T 31854-2015
(中英文版)
Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry
GB/T 31351-2014
(中英文版)
Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers
GB/T 31225-2014
(中英文版)
Test method for the thickness of silicon oxide on Si substrate by ellipsometer
GB/T 30860-2014
(中英文版)
Test methods for surface roughness and saw mark of silicon wafers for solar cells
GB/T 30859-2014
(中英文版)
Test method for warp and waviness of silicon wafers for solar cells
GB/T 30869-2014
(中英文版)
Test method for thickness and total thickness variation of silicon wafers for solar cell
GB/T 30868-2014
(中英文版)
Test method for measuring micropipe density of monocrystalline silicon carbide wafers―Chemically etching
GB/T 30867-2014
(中英文版)
Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers
GB/T 30866-2014
(中英文版)
Test method for measuring diameter of monocrystalline silicon carbide wafers
GB/T 30454-2013
(中英文版)
Test methods of silicate phosphors activated by rare earths for LED
GB/T 29852-2013
(中英文版)
Test method for measuring Phosphorus, Arsenic and Antimony in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
GB/T 29851-2013
(中英文版)
Test method for measuring Boron and Aulminium in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
GB/T 29850-2013
(中英文版)
Test method for measuring compensation degree of silicon materials used for photovoltaic applications
GB/T 29849-2013
(中英文版)
Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry
GB/T 29507-2013
(中英文版)
Test method for measuring flatness, thickness and total thickness variation on silicon wafers by automated non-contact scanning
GB/T 29505-2013
(中英文版)
Test method for measuring surface roughness on planar surfaces of silicon wafer

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