“Test method for sili ” 中國GB標準檢索結果 |
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1. 已翻譯的GB標準英文版（有 SALE
標誌的），以及GB標準中文版，可以直接在網站上購買，在收到您付款後，會在1～3天內發您郵箱。 2. 其他未翻譯的GB標準英文版，在接到您翻譯訂單後，才進行翻譯，時間一般需要多3～5天。 |
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GB/T 26068-2010 （中英文版） Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance |
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GB/T 26067-2010 （中英文版） Standard test method for dimensions of notches on silicon wafers |
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GB/T 6621-2009 （中英文版） Testing methods for surface flatness of silicon slices |
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GB/T 6620-2009 （中英文版） Test method for measuring warp on silicon slices by noncontact scanning |
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GB/T 6619-2009 （中英文版） Test methods for bow of silicon wafers |
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GB/T 6618-2009 （中英文版） Test method for thickness and total thickness variation of silicon slices |
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GB/T 6617-2009 （中英文版） Test method for measuring resistivity of silicon wafer using spreading resistance probe |
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GB/T 4058-2009 （中英文版） Test method for detection of oxidation induced defects in polished silicon wafers |
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GB/T 24578-2009 （中英文版） Test method for measuring surface metal contamination on silicon wafers by total reflection X-ray fluorescence spectroscopy |
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GB/T 24577-2009 （中英文版） Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography |
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GB/T 24575-2009 （中英文版） Test method for measuring surface sodium,aluminum,potassium,and iron on silicon and epi substrates by secondary ion mass spectrometry |
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GB/T 24574-2009 （中英文版） Test methods for photoluminescence analysis of single crystal silicon for III-V impurities |
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GB/T 24582-2009 （中英文版） Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-inductively coupled plasma mass spectrometry |
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GB/T 24581-2009 （中英文版） Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities |
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GB/T 24580-2009 （中英文版） Test method for measuring boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry |
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GB/T 24579-2009 （中英文版） Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-atomic absorption spectroscopy |
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GB/T 1554-2009 （中英文版） Testing method for crystallographic perfection of silicon by preferential etch techniques |
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GB/T 1553-2009 （中英文版） Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay |
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GB/T 1551-2009 （中英文版） Test method for measuring resistivity of monocrystal silicon |
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GB/T 14144-2009 （中英文版） Testing method for determination of radial interstitial oxygen variation in silicon |
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GB/T 14141-2009 （中英文版） Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array |
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GB/T 13387-2009 （中英文版） Test method for measuring flat length wafers of silicon and other electronic materials |
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GB/T 1558-2009 （中英文版） Test method for substitutional atomic carbon concent of silicon by infrared absorption |
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GB/T 1036-2008 （中英文版） Test method for coefficient of linear thermal expansion of plastics between -30℃ and 30℃ with a vitreous silica dilatometer |
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GB/T 10701-2008 （中英文版） Test methods for thermal stability of silica glass |
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GB/T 16175-2008 （中英文版） Biological evaluation test methods for medical organic silicon materials |
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GB/T 19922-2005 （中英文版） Standard test methods for measuring site flatness on silicon wafers by noncontact scanning |
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GB/T 14142-1993 （中英文版） Test method for crystallographic perfection of epit-axial layers in silicon by etching techniques |
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GB/T 12442-1990 （中英文版） Test method for the hydroxyl groups contentof silica glass |
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