“Specification for a ” 中國GB標準檢索結果 |
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1. 已翻譯的GB標準英文版(有 SALE
標誌的),以及GB標準中文版,可以直接在網站上購買,在收到您付款後,會在1~3天內發您郵箱。 2. 其他未翻譯的GB標準英文版,在接到您翻譯訂單後,才進行翻譯,時間一般需要多3~5天。 |
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SJ 1826-1981 3dk100型npn矽外延平面小功率開關三極管(中英文版) Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK100 |
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SJ 1825-1981 3dk21型npn矽外延平面小功率開關三極管(中英文版) Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK21 |
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SJ 1807-1981 2cc120(122、124)~2cc420(422、424)型矽調諧變容二極體(中英文版) Detail specification for silicon tuning variable capacitance diodes, for Type 2CC120, 2CC122 and 2CC124; 2CC220, 2CC222 and 2CC224; 2CC320, 2CC322, 2CC324; 2CC420, 2CC422 and 2CC424 |
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SJ 1806-1981 2cc110(210、310、410、130)型矽頻段轉換變容二極體(中英文版) Detail specification for silicon band switching varialbe capacitance diodes, Type 2CC110, 2CC210, 2CC310, 2CC410, 2CC130 |
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SJ 1805-1981 2cc126型矽調頻變容二極體(中英文版) Detail specification for silicon frequency modulated variable capacitance diodes, Type 2CC126 |
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SJ 1804-1981 2cc101~104(201~204、301~304、401~404)型矽調諧變容二極體(中英文版) Detail specification for silicon tuning variable capacitance diodes, Type 2CC101~104, 2CC201~204, 2CC301~304, 2CC401~404 |
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SJ 1795-1981 50-1000ma小電流半導體閘流管(中英文版) Detail specification for 50-1000mA low current thyristors |
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SJ 1794-1981 半導體器件生產用擴散爐通用技術條件(中英文版) General specification for diffusion furnace for semiconductor device manufacturing |
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SJ 1704-1981 功率速調管總技術條件(中英文版) Generic specification for power klystrons |
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SJ 1669-1981 有線數據機技術條件(中英文版) Specification for wire MODEMs |
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SJ/Z 1941-1981 電子工業專用設備機械加工通用技術要求(中英文版) General specification for machining operation of special equipment for electronic industry |
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SJ 2131-1982 潔淨工作臺通用技術條件(中英文版) General specification for clean work stations |
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SJ 2108-1982 cs51型n溝道結型場效應小功率半導體開關三極管(中英文版) Detail specification for N channel junction field-effect low power switching transistors, Type CS51 |
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SJ 2107-1982 cs50型n溝道結型場效應小功率半導體開關三極管(中英文版) Detail specification for N channel junction field-effect low power switching transistors, Type CS50 |
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SJ 2106-1982 cs49型n溝道結型場效應小功率半導體開關三極管(中英文版) Detail specification for N channel junction field-effect low power switching transistors, Type CS49 |
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SJ 2105-1982 cs48型n溝道結型場效應小功率半導體開關三極管(中英文版) Detail specification for N channel junction field-effect low power switching transistors, Type CS48 |
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SJ 2349-1983 磁鼓記憶體總技術條件(中英文版) Generic specification for magnetic drum memories |
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SJ 2348-1983 小型數位電子電腦通用技術條件(中英文版) General specification for minicomputer |
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SJ 2346-1983 矩形波導終端負載總技術條件(中英文版) General specification for rectangular waveguides with terminal loads |
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SJ/Z 9006-1987 電子器件(或部件)規範中逐批檢查與週期檢查程式指南(中英文版) Guide for the inclusion of lot-by-lot and periodic inspection procedures in specifications for electronic components (or parts) |
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SJ 1557-1980 旁熱型負溫度係數熱敏電阻器總技術條件(中英文版) General specification for indirectly heated temperature coefficient themistors |
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SJ 1553-1980 測溫型負溫度係數熱敏電阻器總技術條件(中英文版) General specification for negative temperature coefficient thermistors for temperature measurement |
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SJ 1893-1981 電子管管座、石英諧振器插座總技術條件(中英文版) General specification for sockets for electronic tubes and valves and crystal units |
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SJ 1885-1981 複合介質電容器總技術條件(中英文版) Generic specification for compound dielectric capacitors |
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SJ 1882-1981 收音機用空氣介質可變電容器總技術條件(中英文版) General specification for variable air dielectric capacitors for use in radio receivers |
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SJ 1784-1981 ql1~9和ql21~28矽單相橋式整流器(中英文版) Detail specification for silicon single phase bridge rectifiers, Type QL1-9 and QL21-28 |
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SJ 1783-1981 電真空陶瓷零件技術條件(中英文版) Specification for electrical vacuum ceramic parts |
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SJ 1780-1981 普通二極型濺射離子泵 技術條件(中英文版) Ordinary two-electrode sputtering ion pump--Performance specification |
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SJ 2004-1981 cs34型n溝道結型場效應半導體對管(中英文版) Detail specification for N channel junction pair field-effect transistors, Type CS34 |
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SJ 2003-1981 cs33型n溝道結型場效應半導體對管(中英文版) Detail specification for N channel junction pair field-effect transistors, Type CS33 |
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