网站首頁   GB 中國國家標準檢索   GB標準關鍵詞 特價英文版GB標準   GB標準檢測及合規性分析 價格和支付方式 聯系我們
 

“(Specification for o ” 中國GB標準檢索結果

1. 已翻譯的GB標準英文版(有 SALE 標誌的),以及GB標準中文版,可以直接在網站上購買,在收到您付款後,會在1~3天內發您郵箱。
2. 其他未翻譯的GB標準英文版,在接到您翻譯訂單後,才進行翻譯,時間一般需要多3~5天。
       
SJ 20184-1992
半導體分立器件 cs3821、3822、3823型場效應電晶體詳細規範(中英文版)
Semiconductor discrete device Detail specification for field-effect transistor of types CS3821, 3822, 3823
SJ 20183-1992
半導體分立器件 3dd6型功率電晶體詳細規範(中英文版)
Semiconductor discrete device Detail specification for type 3DD6 power transistor
SJ 20182-1992
半導體分立器件 3ct682、683、685~692和3ct5206型反向阻斷閘流電晶體詳細規範(中英文版)
Semiconductor discrete device Detail specification for reverse-blocking thyristor for type 3CT682, 683, 685~692 and 3CT 5206
SJ 20181-1992
半導體分立器件 3ct107型反向阻斷閘流電晶體詳細規範(中英文版)
Semiconductor discrete device Detail specification for reverse-blocking thyristor for type 3CT107
SJ 20180-1992
半導體分立器件 3ct105型反向阻斷閘流電晶體詳細規範(中英文版)
Semiconductor discrete device Detail specification for reverse-blocking history type 3CT105
SJ 20179-1992
半導體分立器件 3ct103型反向阻斷閘流電晶體詳細規範(中英文版)
Semiconductor discrete device Detail specification for reveres-blocking history type 3CT103
SJ 20178-1992
半導體分立器件 3ck38型功率開關電晶體詳細規範(中英文版)
Semiconductor discrete device Detail specification for type 3CK38 power swithing transistor
SJ 20177-1992
半導體分立器件 3ck3634~3ck3637型pnp矽小功率開關電晶體詳細規範(中英文版)
Semiconductor discrete device Detail specification for NPN silicon low-power switching transistor for type 3CK3634~3CK3637
SJ 20176-1992
半導體分立器件 3dg3439型和3dg3440型npn矽小功率高反壓電晶體詳細規範(中英文版)
Semiconductor discrete device Detail specification for NPN silicon low-power high-reverse-voltage transistor of types 3DG3499 and 3DG3440
SJ 20175-1992
半導體分立器件 3dg918型npn矽超高頻小功率電晶體詳細規範(中英文版)
Semiconductor discrete device Detail specification for NPN silicon ultra-high frequency low-power transistor of type 3DG918
SJ 20174-1992
半導體分立器件 3dk2221(2221a、2222、2222a)型npn矽小功率開關電晶體詳細規範(中英文版)
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2221, 3DK2221A, 3DK2222 and 3DK2222A
SJ 20173-1992
半導體分立器件 3dk2218(2218a、2219、2219a)型npn矽小功率開關電晶體詳細規範(中英文版)
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2218, 3DK2218A, 3DK2219 and 3DK2219A
SJ 20172-1992
半導體分立器件 3dk38型功率開關電晶體詳細規範(中英文版)
Semiconductor discrete device Detail specification for type 3DK38 power swithing transistor
SJ 20171-1992
半導體分立器件 3dk51型功率開關電晶體詳細規範(中英文版)
Semiconductor discrete device Detail specification for type 3DK51 power switching transistor
SJ 20170-1992
半導體分立器件 3dk37型功率開關電晶體詳細規範(中英文版)
Semiconductor discrete device Detail specification for type 3DK37 power switching transistor
SJ 20169-1992
半導體分立器件 3dk36型功率開關電晶體詳細規範(中英文版)
Semiconductor discrete device Detail specification for type 3DK36 power switching transistor
SJ 20168-1992
半導體分立器件 3dk12型功率開關電晶體詳細規範(中英文版)
Semiconductor discrete device Detail specification for type 3DK12 power switching transistor
SJ 20167-1992
電子管sf—1403型矽增強靶攝像管詳細規範(中英文版)
Electron tube Detail specification for silicon-intensifier tartget camera tube of type SF-1403
SJ 20166-1992
電子管sf—1213型硫化銻視像管詳細規範(中英文版)
Electron tube Detail specification for antimony Sulfide Vidicon of type SF-1213
SJ 20165-1992
電子管 j405γ型輻射計數管詳細規範(中英文版)
Electron tube Detail specification for radiation counter tubes of types J405γ
SJ 20164-1992
電子管 j305βγ型輻射計數管詳細規範(中英文版)
Electron tube Detail specification for radiation counter tubes of types J305βγ
SJ 20163-1992
半導體積體電路jμ8086型微處理器詳細規範(中英文版)
Detail specification of Ju8086 microprocessor for semiconductor integrated circuits
SJ 20162-1992
半導體積體電路jt54ls283型ls—ttl 四位元二進位超前進位元全加器詳細規範(中英文版)
Detail specification for types JT54LS283 4-bit binary FULL ADDERS with fast carry of LS-TTL semiconductor integrated circuits
SJ 20161-1992
半導體積體電路jt54ls273(373、374和377)型ls—ttl 可級聯觸發器詳細規範(中英文版)
Detail specification for types JT54LS273. JT54LS373. JT54LS374 and JT54LS377 cascadable FLIP-FLOPS of LS-TTL semiconductor integrated circuits
SJ 20160-1992
半導體積體電路jt54s194和jt54s195型s—ttl 移位暫存器詳細規範(中英文版)
Detail specification for types JT54S194 and JT54S195 shift rfgisters of S-TTL semiconductor integrated circuits
SJ 20159-1992
半導體積體電路jt54ls155和jt54ls156型ls—ttl 解碼器詳細規範(中英文版)
Detail specification for types JT54LS155 and JT54LS156 DECODERS of LS-TTL semiconductor integrated circuits
SJ 20158-1992
半導體積體電路jt54s151、jt54s153和jt54s157型s—ttl 資料選擇器詳細規範(中英文版)
Detail specification for types JT54S151, JT54S153 and JT54S157 DATA SELECTORS/MULTIOLEXERS of S-TTL semiconductor integrated circuits
SJ 20157-1992
半導體積體電路jt54ls32和jt54ls86型ls—ttl或閘詳細規範(中英文版)
Detail specification for types JT54LS32 and JT54LS86 OR GATES of LS-TTL semiconductor integrated circuits
SJ 20155-1992
射頻輻射吸收體(微波吸收材料)的通用規範(中英文版)
General specification for radio frequency radiation absorber (microwave absorbing material)
SJ 20152-1992
電子器件用鎳棒、鎳絲規範試驗方法(中英文版)
Specification for nickel rars and nickel wires for electron devices

找到:10929條目   |  [首頁]-[上一頁]-[下一頁]-[尾頁]  | 去到: [220] [221] [222] [223] [224] [225] [226]

 

1F Zhongmao Building, No.1 Beizhan Road, Luohu District, Shenzhen City, China
+86-755-2583-1330        info@transcustoms.com 
©  Copyright 2001-2025  RJS MedTech Inc. All Rights Reserved