“(Detail specificatio ” 中國GB標準檢索結果 |
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SJ 20283-1993 半導體積體電路 jt54ls125和jt54ls126型ls-ttl四緩衝器（3s）詳細規範（中英文版） Detail specification for types JT54LS125, JY54LS126 of quadruple bus buffer gates with three-state outputs LS-TTL semiconductor integrated circuits |
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SJ 20088-1992 ct105型瓷介固定電容器詳細規範（中英文版） Detail specification capacitors, fixed, ceramic dielectric, type CT105 |
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SJ 20087-1992 ｃｔ８１１２型高壓瓷介固定電容器詳細規範（中英文版） Detail specification capacitors, fixed, ceramic dielectric, high voltage type CT8112 |
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SJ 20086-1992 ｃｔ８１１０型高壓瓷介固定電容器詳細規範（中英文版） Detail specification capacitors, fixed, ceramic dielectric, high voltage type CT8110 |
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SJ 20085-1992 ｃｔ８１０８型高壓瓷介固定電容器詳細規範（中英文版） Detail specification capacitors, fixed, ceramic dielectric, high voltage type CT8108 |
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SJ 20084-1992 有可靠性指標的ｃｌｋ２３３型（非金屬殼）金屬化聚酯膜介質直流固定電容器詳細規範（中英文版） Capacitors, fixed, metallized polyethylene-terephthalate filmed dielectric d.c. in nonmetal cases, established reliability, CLK233 type, detail specification for |
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SJ 20083-1992 有可靠性指標的ｃｂｂｋ１１１型（非金屬殼）聚丙烯膜介質直流固定電容器詳細規範（中英文版） Capacitors, fixed, polypropylene filmed dielectric metal foil d.c. in nonmetal cases, established reliability, CBBK111 type detail specification for |
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SJ 20082-1992 有可靠性指標的ｃｂｂｋ２４型（非金屬殼）金屬化聚丙烯膜介質直流固定電容器詳細規範（中英文版） Capacitors, fixed, metallized polypropylene filmed dielectric d.c. in nonmetal cases, established reliability, CBBK24 type detail specification for |
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SJ 20081-1992 有可靠性指標的ｃｂｂｋ２３型（非金屬殼）雙面金屬化聚丙烯膜介質直流固定電容器詳細規範（中英文版） Capacitors, fixed, double metallized polypropylene filmed dielectric d.c. in nonmetal cases, established reliability, CBBK23 type detail specification for |
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SJ 20080-1992 ｒｍｋ２０１２型有可靠性指標的膜式片狀固定電阻器詳細規範（中英文版） (RMK2012 type of film has a reliability index of fixed resistors detailed specification sheet) |
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SJ 20076-1992 半導體積體電路jμ82288型匯流排控制器詳細規範（中英文版） Detailed specifications for Jμ82288 bus controller of semiconductor integrated circuit |
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SJ 20075-1992 半導體積體電路jμ8259a型可程式設計中斷控制器詳細規範（中英文版） Detailed specifications for Jμ8309 programmable interrupt controller of semiconductor integrated circuit |
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SJ 20074-1992 半導體積體電路jμ8255a型可程式設計外設介面詳細規範（中英文版） Detailed specifications for Jμ8305 programmable peripheral equipment interface of semiconductor integrated circuit |
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SJ 20073-1992 半導體積體電路jμ8254型可程式設計定時計數器詳細規範（中英文版） Detailed specifications for Jμ8304 programmable timer/counter of semiconductor integrated circuit |
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SJ 20072-1992 半導體分立器件 ｇｈ２４、ｇｈ２５和ｇｈ２６型半導體光耦合器詳細規範（中英文版） Detail specification for semiconductor opto-couplers for type GH24, GH25 and GH26 |
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SJ 20071-1992 半導體分立器件 ２ｃｋ４１４８型矽開關二極體詳細規範（中英文版） Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK4148 |
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SJ 20070-1992 半導體分立器件 ２ｃｋ１０５型矽開關二極體詳細規範（中英文版） Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK105 |
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SJ 20069-1992 半導體分立器件 ２ｃｋ７６型矽開關二極體詳細規範（中英文版） Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK76 |
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SJ 20068-1992 半導體分立器件 ２ｄｗ１４～１８型低雜訊矽電壓基準二極體詳細規範（中英文版） Semiconductor discrete device. Detail specification for lower noise for silicon voltage reference diode for type 2DW14~18 |
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SJ 20067-1992 半導體分立器件 ２ｃｚ３０型矽整流二極體詳細規範（中英文版） Semiconductor discrete device. Detail specification for type 2CZ30 silicon rectifier diode |
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SJ 20066-1992 半導體分立器件 ２ｃｌ３型矽高壓整流堆詳細規範（中英文版） Semiconductor discrete device. Detail specification for type 2CL3 silicon high voltage rectifier stack |
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SJ 20065-1992 半導體分立器件 ｑｌ７２型矽三相橋式整流器詳細規範（中英文版） Semiconductor discrete device. Detail specification for type QL72 silicon three phase full wave bridge rectifier |
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SJ 20064-1992 半導體分立器件 ｑｌ７１型矽單相橋式整流器詳細規範（中英文版） Semiconductor discrete device. Detail specification for type QL71 Silicon single phase full wave bridge rectifier |
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SJ 20063-1992 半導體分立器件 ３ｄｇ２１３型ｎｐｎ矽超高頻低雜訊雙差分對電晶體詳細規範（中英文版） Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG213 |
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SJ 20062-1992 半導體分立器件 ３ｄｇ２１０型ｎｐｎ矽超高頻低雜訊差分對電晶體詳細規範（中英文版） Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG210 |
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SJ 20061-1992 半導體分立器件 ｃｓ１４６型矽ｎ溝道耗盡型場效應電晶體詳細規範（中英文版） Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of type CS146 |
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SJ 20060-1992 半導體分立器件 ３ｄｇ１２０型ｎｐｎ矽高頻小功率電晶體詳細規範（中英文版） Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG120 |
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SJ 20059-1992 半導體分立器件 ３ｄｇ１１１型ｎｐｎ矽高頻小功率電晶體詳細規範（中英文版） Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111 |
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SJ 20058-1992 半導體分立器件 ３ｄｋ１０５型ｎｐｎ矽小功率開關電晶體詳細規範（中英文版） Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK105 |
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SJ 20057-1992 半導體分立器件 ３ｄｋ１０４型ｎｐｎ矽小功率開關電晶體詳細規範（中英文版） Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK104 |
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