“Specification on con ” 中國GB標準檢索結果 |
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1. 已翻譯的GB標準英文版（有 SALE
標誌的），以及GB標準中文版，可以直接在網站上購買，在收到您付款後，會在1～3天內發您郵箱。 2. 其他未翻譯的GB標準英文版，在接到您翻譯訂單後，才進行翻譯，時間一般需要多3～5天。 |
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YD/T 2394.2-2012 高頻譜利用率和高資料吞吐的無線局域網技術要求 第2部分：增強型超高速無線局域網媒體接入控制層（mac）和實體層（phy）（中英文版） High spectrum efficiency and high throughput wireless LAN techinical requirements. Part 2: Medium access control (MAC) and physical layer (PHY) specifications for enhanced ultra high throughput wireless local aera network |
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YD/T 2394.1-2012 高頻譜利用率和高資料吞吐的無線局域網技術要求 第1部分：超高速無線局域網媒體接入控制層（mac）和實體層（phy）（中英文版） High spectrum efficiency and high throughput wireless LAN techinical requirements. Part 1: Medium access control (MAC) and physical layer (PHY) specifications for ultra high throughput wireless local area network |
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YD/T 1822-2012 網站設計無障礙評級測試方法（中英文版） Testing specification for web content accessibility evaluation |
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YD/T 1251.2-2013 路由式通訊協定一致性測試方法 開放最短路徑優先協定（OSPF）（中英文版） The conformance testing specification for open shortest path first(OSPF)) |
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YD/T 1251.1-2013 路由式通訊協定一致性測試方法 中間系統到中間系統路由切換式通訊協定（IS-IS）（中英文版） The conformance testing specification for intermediate system to intermediate system routing exchange protocol (IS-IS) |
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YD 5197.2-2014 接入設備抗地震性能檢測規範 第二部分:VSAT衛星地球站設備（中英文版） (Access device to detect anti-seismic performance specifications second part: VSAT satellite earth station equipment) |
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YD 5100.2-2014 移動通信基站設備抗地震性能檢測規範 第二部分:基站控制器設備（中英文版） (Mobile communication base station equipment to detect anti-seismic performance specifications Part II: a base station controller device) |
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YD 5084.2-2014 交換設備抗地震性能檢測規範第二部分:IP網路交換設備（中英文版） (The second part of the anti-seismic performance testing switching equipment specifications: IP network switching equipment) |
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YD 5084.1-2014 交換設備抗地震性能檢測規範第一部分:程式控制數位電話交換機（中英文版） (Switching equipment to detect anti-seismic performance specifications Part I: program-controlled digital telephone switches) |
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YD 5003-2014 通信建築工程設計規範（中英文版） (Communications Construction Engineering Design Specification) |
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YD 5220-2015 內容分發網路工程技術規範（中英文版） (Content distribution network engineering and technical specifications) |
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SJ 911-1974 2dw230～236型矽平面溫度補償穩壓二極體（中英文版） Detail specification for silicon planar temperature compensation voltage regulator diodes, Type 2DW230~236 |
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SJ 910-1974 3dw50～202型矽半導體穩壓二極體（中英文版） Detail specification for silicon voltage regulator diodes, Type 3DW50~202 |
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SJ 909-1974 2cw50～149型矽半導體穩壓二極體（中英文版） Detail specification for silicon voltage regulator diodes, Type 2CW50~149 |
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SJ 801-1974 3dg181型npn矽外延平面高頻小功率高反壓三極管（中英文版） Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors, Type 3DG181 |
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SJ 800-1974 3dg180型npn矽外延平面高頻小功率高反壓三極管（中英文版） Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors, Type 3DG180 |
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SJ 799-1974 3dg170型npn矽平面高頻小功率高反壓三極管（中英文版） Detail specification for silicon NPN epitaxial planar high frequency low power reverse voltage transistors, Type 3DG170 |
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SJ 797-1974 3dg161型npn矽平面高頻小功率高反壓三極管（中英文版） Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors, Type 3DG161 |
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SJ 796-1974 3dg160型npn矽平面高頻小功率高反壓三極管（中英文版） Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors, Type 3DG160 |
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SJ 2241-1982 同心型微調電容器總技術條件（中英文版） Generic specification for variable concentric trimmer capacitors |
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SJ 795-1974 3dg142型npn矽外延平面高頻小功率低雜訊三極管（中英文版） Detail specification for silicon NPN epitaxial planar high frequency low power low noise transistors, Type 3DG142 |
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SJ 794-1974 3dg141型npn矽外延平面高頻小功率低雜訊三極管（中英文版） Detail specification for silicon NPN epitaxial planar high frequency low power low noise transistors, Type 3DG141 |
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SJ 791-1974 3dg122型npn矽外延平面高頻小功率三極管（中英文版） Detail specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG122 |
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SJ 790-1974 3dg121型npn矽外延平面高頻小功率三極管（中英文版） Detail specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG121 |
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SJ 789-1974 3dg120型npn矽外延平面高頻小功率三極管（中英文版） Detail specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG120 |
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SJ 788-1974 3dg112型npn矽外延平面高頻小功率三極管（中英文版） Detail specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG112 |
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SJ 787-1974 3dg111型npn矽外延平面高頻小功率三極管（中英文版） Detail specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG111 |
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SJ 786-1974 3dg110型npn矽外延平面高頻小功率三極管（中英文版） Detail specification for silicon NPN planar high frequency low power transistors, Type 3DG110 |
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SJ 785-1974 3dg103型npn矽外延平面高頻小功率三極管（中英文版） Detail specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG103 |
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SJ 784-1974 3dg102型npn矽外延平面高頻小功率三極管（中英文版） Detail specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG102 |
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