“Specification on con ” 中國GB標準檢索結果 |
![]() |
1. 已翻譯的GB標準英文版(有 SALE
標誌的),以及GB標準中文版,可以直接在網站上購買,在收到您付款後,會在1~3天內發您郵箱。 2. 其他未翻譯的GB標準英文版,在接到您翻譯訂單後,才進行翻譯,時間一般需要多3~5天。 |
![]() |
SJ 20283-1993 半導體積體電路 jt54ls125和jt54ls126型ls-ttl四緩衝器(3s)詳細規範(中英文版) Detail specification for types JT54LS125, JY54LS126 of quadruple bus buffer gates with three-state outputs LS-TTL semiconductor integrated circuits |
![]() |
|
![]() |
SJ 20076-1992 半導體積體電路jμ82288型匯流排控制器詳細規範(中英文版) Detailed specifications for Jμ82288 bus controller of semiconductor integrated circuit |
![]() |
|
![]() |
SJ 20075-1992 半導體積體電路jμ8259a型可程式設計中斷控制器詳細規範(中英文版) Detailed specifications for Jμ8309 programmable interrupt controller of semiconductor integrated circuit |
![]() |
|
![]() |
SJ 20074-1992 半導體積體電路jμ8255a型可程式設計外設介面詳細規範(中英文版) Detailed specifications for Jμ8305 programmable peripheral equipment interface of semiconductor integrated circuit |
![]() |
|
![]() |
SJ 20073-1992 半導體積體電路jμ8254型可程式設計定時計數器詳細規範(中英文版) Detailed specifications for Jμ8304 programmable timer/counter of semiconductor integrated circuit |
![]() |
|
![]() |
SJ 20072-1992 半導體分立器件 gh24、gh25和gh26型半導體光耦合器詳細規範(中英文版) Detail specification for semiconductor opto-couplers for type GH24, GH25 and GH26 |
![]() |
|
![]() |
SJ 20071-1992 半導體分立器件 2ck4148型矽開關二極體詳細規範(中英文版) Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK4148 |
![]() |
|
![]() |
SJ 20070-1992 半導體分立器件 2ck105型矽開關二極體詳細規範(中英文版) Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK105 |
![]() |
|
![]() |
SJ 20069-1992 半導體分立器件 2ck76型矽開關二極體詳細規範(中英文版) Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK76 |
![]() |
|
![]() |
SJ 20068-1992 半導體分立器件 2dw14~18型低雜訊矽電壓基準二極體詳細規範(中英文版) Semiconductor discrete device. Detail specification for lower noise for silicon voltage reference diode for type 2DW14~18 |
![]() |
|
![]() |
SJ 20067-1992 半導體分立器件 2cz30型矽整流二極體詳細規範(中英文版) Semiconductor discrete device. Detail specification for type 2CZ30 silicon rectifier diode |
![]() |
|
![]() |
SJ 20066-1992 半導體分立器件 2cl3型矽高壓整流堆詳細規範(中英文版) Semiconductor discrete device. Detail specification for type 2CL3 silicon high voltage rectifier stack |
![]() |
|
![]() |
SJ 20065-1992 半導體分立器件 ql72型矽三相橋式整流器詳細規範(中英文版) Semiconductor discrete device. Detail specification for type QL72 silicon three phase full wave bridge rectifier |
![]() |
|
![]() |
SJ 20064-1992 半導體分立器件 ql71型矽單相橋式整流器詳細規範(中英文版) Semiconductor discrete device. Detail specification for type QL71 Silicon single phase full wave bridge rectifier |
![]() |
|
![]() |
SJ 20063-1992 半導體分立器件 3dg213型npn矽超高頻低雜訊雙差分對電晶體詳細規範(中英文版) Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG213 |
![]() |
|
![]() |
SJ 20062-1992 半導體分立器件 3dg210型npn矽超高頻低雜訊差分對電晶體詳細規範(中英文版) Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG210 |
![]() |
|
![]() |
SJ 20061-1992 半導體分立器件 cs146型矽n溝道耗盡型場效應電晶體詳細規範(中英文版) Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of type CS146 |
![]() |
|
![]() |
SJ 20060-1992 半導體分立器件 3dg120型npn矽高頻小功率電晶體詳細規範(中英文版) Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG120 |
![]() |
|
![]() |
SJ 20059-1992 半導體分立器件 3dg111型npn矽高頻小功率電晶體詳細規範(中英文版) Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111 |
![]() |
|
![]() |
SJ 20058-1992 半導體分立器件 3dk105型npn矽小功率開關電晶體詳細規範(中英文版) Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK105 |
![]() |
|
![]() |
SJ 20057-1992 半導體分立器件 3dk104型npn矽小功率開關電晶體詳細規範(中英文版) Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK104 |
![]() |
|
![]() |
SJ 20056-1992 半導體分立器件 3dk103型npn矽小功率開關電晶體詳細規範(中英文版) Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK103 |
![]() |
|
![]() |
SJ 20055-1992 半導體分立器件 3dk102型npn矽小功率開關電晶體詳細規範(中英文版) Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK102 |
![]() |
|
![]() |
SJ 20054-1992 半導體分立器件 3dk101型npn矽小功率開關電晶體詳細規範(中英文版) Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK101 |
![]() |
|
![]() |
SJ 20045-1992 氣導動圈式和電磁式送話器總規範(中英文版) General specification for air. Conduction dynamic and electro magnetic transmitters |
![]() |
|
![]() |
SJ 20025-1992 金屬氧化物半導體氣敏件總規範(中英文版) Generic specification for gas sensors of metal-oxide semiconductor |
![]() |
|
![]() |
SJ 20282-1993 半導體積體電路 jt54ls02、jt54ls27和jt54ls266型ls-ttl反或閘詳細規範(中英文版) Detail specification for types JT54LS01, JT54LS27, and JT54LS266 NOR gates of LS-TTL semiconductor integrated circuits |
![]() |
|
![]() |
SJ 20281-1993 半導體積體電路 jt54ls13、jt54ls14和jt54ls132型ls-ttl反及閘詳細規範(中英文版) Detail specification for type JT54LS13, JT54LS14 and JT54LS132 positive-NAND gates of LS-TTL semiconductor circuits |
![]() |
|
![]() |
SJ 20280-1993 半導體積體電路jt54ls00(03、04、05、10、12、20、22、30)型ls—ttl反及閘詳細規範(中英文版) Detail specification for types JT54LS00, JT54LS03, JT54LS04, JT54LS05, JT54LS10, JT54LS12, JT54LS20, JT54LS22 and JT54LS30 NAND gates of LS-TTL semiconductor integrated circuits |
![]() |
|
![]() |
SJ 20279-1993 半導體積體電路jt54ls08、jt54ls09、jt54ls11、jt54ls15、jt54ls21型ls—ttl及閘詳細規範(中英文版) Detail specification for types JT54LS08, JT54LS09, JT54LS11, JT54SL15 and JT54LS21 AND gates of LS-TTL semiconductor integrated circuits |
![]() |
找到:2978條目 | [首頁]-[上一頁]-[下一頁]-[尾頁] | 去到: [55] [56] [57] [58] [59] [60] [61] |