“Semiconductor discre ” 中國GB標準檢索結果 |
1. 已翻譯的GB標準英文版(有 SALE
標誌的),以及GB標準中文版,可以直接在網站上購買,在收到您付款後,會在1~3天內發您郵箱。 2. 其他未翻譯的GB標準英文版,在接到您翻譯訂單後,才進行翻譯,時間一般需要多3~5天。 |
SJ 50033/38-1994 半導體分立器件 cs4856~cs4861型矽n溝道耗盡型場效應電晶體詳細規範(中英文版) Semiconductor discrete device. Detail specification for type CS4856~CS4861 silicon N-channel deplition mode field-effect transistor |
|||
SJ 50033.46-1994 半導體分立器件 2cz59型矽整流二極體詳細規範(中英文版) Semiconductor discrete device. Detail specification for type 2CZ59 silicon rectifier diode |
|||
SJ 50033.49-1994 半導體分立器件 2cj4220系列階躍二極體詳細規範(中英文版) Semiconductor discrete device. Detail specification for step recovery diodes for 2CJ4220 series |
|||
SJ 50033/15-1994 半導體分立器件 3dk306型功率開關電晶體詳細規範(中英文版) Discrete semiconductor devices Detailed specifications for 3DK306 power switching transistors |
|||
SJ 50033/23-1994 半導體分立器件 3dk309型功率開關電晶體詳細規範(中英文版) Discrete semiconductor devices Detailed specifications for 3DK309 power switching transistors |
|||
SJ 50033.43-1994 半導體分立器件 2cz104型矽開關整流二極體詳細規範(中英文版) Semiconductor discrete device. Detail specification for type 2CZ104 silicon switching rectifier diode |
|||
SJ 50033.51-1994 半導體分立器件 cs0558型砷化鎵微波雙柵場效應電晶體詳細規範(中英文版) Semiconductor discrete devices. Detail specification for type CS0558 GaAs microwave dual gate FET |
|||
SJ 50033.56-1994 半導體分立器件 2ck85型矽開關二極體詳細規範(中英文版) Semiconductor discrete device. Detail specification for type 2CK85 silicon switching diode |
|||
SJ 50033.45-1994 半導體分立器件 2cz58型矽整流二極體詳細規範(中英文版) Semiconductor discrete device. Detail specification for type 2CZ58 silicon rectifier diode |
|||
SJ 50033.55-1994 半導體分立器件 2ck82型矽開關二極體詳細規範(中英文版) Semiconductor discrete device. Detail specification for type 2CK82 silicon switching diode |
|||
SJ 50033/19-1994 半導體分立器件 2cz74型矽開關整流二極體詳細規範(中英文版) Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ74 |
|||
SJ 50033/22-1994 半導體分立器件 2cc51e型矽電調變容二極體詳細規範(中英文版) Semiconductor discrete device. Detail specification for silicon tuning varactor diode for type 2CC51E |
|||
SJ 50033/3-1994 半導體分立器件 gp、gt和gct級gh21、gh22和gh23型半導體光耦合器詳細規範(中英文版) Semiconductor discrete device. Detail specification for semiconductor opto-couplers for type GH21, GH22 and GH23 of GP, GT and GCT classes |
|||
SJ 50033/18-1994 半導體分立器件 2cz73型矽開關整流二極體詳細規範(中英文版) Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ73 |
|||
SJ 50033/26-1994 半導體分立器件 2cw1006~2cw1015型矽電壓調整二極體詳細規範(中英文版) Semiconductor discrete device. Detail specification for type 2CW1006~2CW1015 silicon voltage -- Regulator diode |
|||
SJ 50033/29-1994 半導體分立器件 ek20型砷化鎵高速開關元件詳細規範(中英文版) Semiconductor discrete device. Detail specification for GaAs high-speed switching assembly for type EK20 |
|||
SJ 50033.48-1994 半導體分立器件 2dv8cp型矽微波檢波二極體詳細規範(中英文版) Semiconductor discrete device. Detail specification for type 2DV8CP silicon microwave detector diode |
|||
SJ 50033/25-1994 半導體分立器件 2cw1001~2cw1005型矽電壓調整二極體詳細規範(中英文版) Semiconductor discrete device. Detail specification for type 2CW1001~2CW1005 silicon voltage -- Regulator diode |
|||
SJ 50033/21-1994 半導體分立器件 2cz75型矽開關整流二極體詳細規範(中英文版) Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ75 |
|||
SJ/T 10585-1994 半導體分立器件表面安裝器件外型尺寸及引線框架尺寸(中英文版) Semiconductor discrete device Dimensions of outline and lead-frame for the surface mounting device |
找到:259條目 | [首頁]-[上一頁]-[下一頁]-[尾頁] | 去到: [4] [5] [6] [7] [8] [9] [10] |