“(Detail specificatio” 中國GB標準檢索結果 |
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1. 已翻譯的GB標準英文版(有 SALE
標誌的),以及GB標準中文版,可以直接在網站上購買,在收到您付款後,會在1~3天內發您郵箱。 2. 其他未翻譯的GB標準英文版,在接到您翻譯訂單後,才進行翻譯,時間一般需要多3~5天。 |
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GB/T 13062-2018 半導體器件 積體電路 第21-1部分:膜積體電路和混合膜積體電路空白詳細規範(採用鑒定批准程式)(中英文版) Semiconductor devices—Integrated circuits—Part 21-1:Blank detail specification for film integrated circuits and hybrid film integrated circuits on the basis of the qualification approval procedures |
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GB/T 6346.2601-2018 電子設備用固定電容器 第26-1部分:空白詳細規範 導電高分子固體電解質鋁固定電容器 評定水準EZ(中英文版) Fixed capacitors for use in electronic equipment—Part 26-1:Blank detail specification—Fixed aluminium electrolytic capacitors with conductive polymer solid electrolyte—Assessment level EZ |
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GB/T 36360-2018 半導體光電子器件 中功率發光二極體空白詳細規範(中英文版) Semiconductor optoelectronic devices--Blank detail specification for middle power light-emitting diodes |
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GB/T 36358-2018 半導體光電子器件 功率發光二極體空白詳細規範(中英文版) Semiconductor optoelectronic devices—Blank detail specification for power light-emitting diodes |
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GB/T 36359-2018 半導體光電子器件 小功率發光二極體空白詳細規範(中英文版) Semiconductor optoelectronic devices—Blank detail specification for lower power light-emitting diodes |
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GB/T 29618.2-2017 現場設備工具(FDT)介面規範 第2部分:概念和詳細描述(中英文版) Field device tool (FDT) interface specification—Part 2: Concepts and detailed description |
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HG/T 21536-1992 化工工廠工業爐設計施工圖內容深度統一規定(中英文版) Unified Specification on Contents and Procedure of Detail Design DWN of Industrial Furnaces for Chemical Plants |
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HG/T 20692-2014 化工企業熱工設計施工圖內容和深度統一規定(中英文版) Specification on content and procedure of detail design of thermal engineering for chemical plant |
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HG/T 20656-1998 化工採暖通風與空氣調節詳細設計內容和深度的規定(中英文版) Specification of contents and procedure on heating, ventilating and air conditioning detailed design for chemical plant |
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HG/T 20638-1998 自控專業工程設計文件深度的規定(中英文版) Specification for details of engineering design of instrumentation |
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HG/T 20588-2012 化工建築、結構施工圖內容、深度統一規定(中英文版) Specification for contents and profundity of architectural and structural detail design documents in chemical industry |
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HG/T 20560-1997 化工機械化運輸工藝設計施工圖內容和深度規定(中英文版) The process design specification of the detail design content and procedure for chemical bulk materialhanding |
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HG/T 20519-2009 化工工藝設計施工圖內容和深度統一規定(中英文版) Specification on content and procedure of detail design for chemical plant |
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SJ 911-1974 2dw230~236型矽平面溫度補償穩壓二極體(中英文版) Detail specification for silicon planar temperature compensation voltage regulator diodes, Type 2DW230~236 |
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SJ 910-1974 3dw50~202型矽半導體穩壓二極體(中英文版) Detail specification for silicon voltage regulator diodes, Type 3DW50~202 |
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SJ 909-1974 2cw50~149型矽半導體穩壓二極體(中英文版) Detail specification for silicon voltage regulator diodes, Type 2CW50~149 |
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SJ 801-1974 3dg181型npn矽外延平面高頻小功率高反壓三極管(中英文版) Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors, Type 3DG181 |
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SJ 800-1974 3dg180型npn矽外延平面高頻小功率高反壓三極管(中英文版) Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors, Type 3DG180 |
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SJ 799-1974 3dg170型npn矽平面高頻小功率高反壓三極管(中英文版) Detail specification for silicon NPN epitaxial planar high frequency low power reverse voltage transistors, Type 3DG170 |
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SJ 797-1974 3dg161型npn矽平面高頻小功率高反壓三極管(中英文版) Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors, Type 3DG161 |
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SJ 796-1974 3dg160型npn矽平面高頻小功率高反壓三極管(中英文版) Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors, Type 3DG160 |
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SJ 795-1974 3dg142型npn矽外延平面高頻小功率低雜訊三極管(中英文版) Detail specification for silicon NPN epitaxial planar high frequency low power low noise transistors, Type 3DG142 |
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SJ 794-1974 3dg141型npn矽外延平面高頻小功率低雜訊三極管(中英文版) Detail specification for silicon NPN epitaxial planar high frequency low power low noise transistors, Type 3DG141 |
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SJ 791-1974 3dg122型npn矽外延平面高頻小功率三極管(中英文版) Detail specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG122 |
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SJ 790-1974 3dg121型npn矽外延平面高頻小功率三極管(中英文版) Detail specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG121 |
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SJ 789-1974 3dg120型npn矽外延平面高頻小功率三極管(中英文版) Detail specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG120 |
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SJ 788-1974 3dg112型npn矽外延平面高頻小功率三極管(中英文版) Detail specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG112 |
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SJ 787-1974 3dg111型npn矽外延平面高頻小功率三極管(中英文版) Detail specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG111 |
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SJ 786-1974 3dg110型npn矽外延平面高頻小功率三極管(中英文版) Detail specification for silicon NPN planar high frequency low power transistors, Type 3DG110 |
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SJ 785-1974 3dg103型npn矽外延平面高頻小功率三極管(中英文版) Detail specification for silicon NPN epitaxial planar high frequency low power transistors, Type 3DG103 |
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