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“Discrete semiconduct” 中國GB標準檢索結果

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GB/T 37312.1-2019
航空電子過程管理 航空航太、國防及其他高性能應用領域(ADHP)電子元器件 第1部分:高可靠積體電路與分立半導體器件通用要求(中英文版)
Process management for avionics—Electronic components for aerospace, defence and high performance (ADHP) applications—Part 1: General requirements for high reliability integrated circuits and discrete semiconductors
GB/T 15651.4-2017
半導體器件 分立器件 第5-4部分:光電子器件 半導體雷射器(中英文版)
Semiconductor devices—Discrete devices—Part 5-4:Optoelectronic devices—Semiconductor lasers
GB/T 249-2017
半導體分立器件型號命名方法(中英文版)
The rule of type designation for discrete semiconductor devices
JJG(SJ)310003-2006
(中英文版)
Specification for verification of capacitor parameter testers for semiconductor discrete devices
JJG(SJ)310002-2006
(中英文版)
Specification for verification of DC parameter testers for semiconductor discrete devices
JJG 310003-2006
(中英文版)
Specification for verification of capacitor parameter testers for semiconductor discrete devices
JJG 310002-2006
(中英文版)
Specification for verification of DC parameter testers for semiconductor discrete devices
SJ/T 10416-1993
半導體分立器件晶片總規範(中英文版)
Generic Apecification for chip for semiconductor discrete devices
SJ/Z 9014.3-1987
半導體器件 分立器件和積體電路 第6部分:閘流電晶體(中英文版)
Semiconductor components - Discrete components and integrated circuits Part 6 Thyristors
SJ 20016-1992
半導體分立器件 gp、gt和gct級3dg182型npn矽小功率高反壓電晶體詳細規範(中英文版)
Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP, GT and types GCT classes
SJ 20015-1992
半導體分立器件 gp、gt和gct級3dg130型npn矽高頻小功率電晶體詳細規範(中英文版)
Semiconductor discrete device. Detail specification for PNP silicon high-frequency low-power transistor for types 3DG130 GP, GT and types GCT classes
SJ 20014-1992
半導體分立器件 gp、gt和gct級3cg110型pnp矽小功率電晶體詳細規範(中英文版)
Semiconductor discrete device. Detail specification for PNP silicon low-power transistor for types 3CG110 GP, GT and types GCT classes
SJ 20013-1992
半導體分立器件 gp、gt和gct級cs10型矽n溝道耗盡型場效應電晶體詳細規範(中英文版)
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of types CS10 GP, GT and GCT classes
SJ 20012-1992
半導體分立器件 gp、gt和gct級cs4型矽n溝道耗盡型場效應電晶體詳細規範(中英文版)
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of types CS4 GP, GT and GCT classes
SJ 20011-1992
半導體分立器件 gp、gt和gct級cs1型矽n溝道耗盡型場效應電晶體詳細規範(中英文版)
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of types CS1 GP, GT and GCT classes
SJ 2854-1988
半導體分立器件 塑封引線框架詳細規範(中英文版)
Discrete semiconductor devices--Detail specification for lead frame of plastic package
SJ 2853-1988
半導體分立器件 螺栓形管座管帽詳細規範(中英文版)
Discrete semiconductor devices--Detail specification for thread-hexagonal base and cap
SJ 2852-1988
半導體分立器件 大功率管管座管帽詳細規範(中英文版)
Discrete semiconductor devices--Detail specfication for base and cap of high power transistors
SJ 2851-1988
半導體分立器件 小功率管管座管帽詳細規範(中英文版)
Discrete semiconductor devices--Detail specification for base and cap of low power transistors
SJ 2850-1988
半導體分立器件 管座管帽引線框架總規範(中英文版)
General specification for base, cap and lead frame of discrete semiconductor devices
SJ 2849-1988
半導體分立器件 封裝件結構尺寸(中英文版)
Construction dimensions for package parts of discrete semiconductor devices
SJ/T 10149-1991
電子器件圖形庫 半導體分立器件圖形(中英文版)
Graphic base of electronic components graphics of semiconductor discrete device
SJ 20188-1992
半導體分立器件 2cw3016~3051型電壓調整二極體詳細規範(中英文版)
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CZ5550 through 2CZ5554
SJ 20187-1992
半導體分立器件 2cz5550~5554型矽整流二極體詳細規範(中英文版)
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CZ5550~5554
SJ 20186-1992
半導體分立器件 2cw2970~3015型矽電壓調整二極體詳細規範(中英文版)
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CW2970~3015
SJ/T 9533-1993
半導體分立器件品質分等標準(中英文版)
Grading standard of quality for semiconductor discrete devices
SJ 20185-1992
半導體分立器件 2dw232~236型矽電壓基準二極體詳細規範(中英文版)
Semiconductor discrete device Detail specification for siscon voltage reference diodes for type 2DW232~236
SJ 20184-1992
半導體分立器件 cs3821、3822、3823型場效應電晶體詳細規範(中英文版)
Semiconductor discrete device Detail specification for field-effect transistor of types CS3821, 3822, 3823
SJ 20183-1992
半導體分立器件 3dd6型功率電晶體詳細規範(中英文版)
Semiconductor discrete device Detail specification for type 3DD6 power transistor
SJ 20182-1992
半導體分立器件 3ct682、683、685~692和3ct5206型反向阻斷閘流電晶體詳細規範(中英文版)
Semiconductor discrete device Detail specification for reverse-blocking thyristor for type 3CT682, 683, 685~692 and 3CT 5206

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