“Test method for sili” 中國GB標準檢索結果 |
![]() |
1. 已翻譯的GB標準英文版(有 SALE
標誌的),以及GB標準中文版,可以直接在網站上購買,在收到您付款後,會在1~3天內發您郵箱。 2. 其他未翻譯的GB標準英文版,在接到您翻譯訂單後,才進行翻譯,時間一般需要多3~5天。 |
![]() |
GB/T 43493.3-2023 (中英文版) Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 3: Photoluminescence detection method of defects |
![]() |
|
![]() |
GB/T 43493.2-2023 (中英文版) Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 2: Optical detection methods for defects |
![]() |
|
![]() |
GB/T 1558-2023 (中英文版) Infrared absorption test method for substituted carbon content in silicon |
![]() |
|
![]() |
GB/T 42789-2023 (中英文版) Test method for silicon wafer surface gloss |
![]() |
|
![]() |
GB/T 41605-2022 (中英文版) Silicon nitride materials for rolling bearing balls - Test method for indentation fracture resistance at room temperature - Indentation method |
![]() |
|
![]() |
GB/T 41490-2022 (中英文版) Test method for rolling contact fatigue of silicon nitride ceramics at room temperature ball plate method |
![]() |
|
![]() |
GB/T 32280-2022 (中英文版) Test method for warp and bow of silicon wafers—Automated non-contact scanning method |
![]() |
|
![]() |
GB/T 24581-2022 (中英文版) Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method |
![]() |
|
![]() |
GB/T 41765-2022 (中英文版) Test method for dislocation density of silicon carbide single crystal |
![]() |
|
![]() |
GB/T 41737-2022 (中英文版) Aluminum matrix composites - Test method for volume fraction of silicon carbide - Dissolution method |
![]() |
|
![]() |
GB/T 40279-2021 (中英文版) Test method for thickness of films on silicon wafer surface—Optical reflection method |
![]() |
|
![]() |
GB/T 14146-2021 (中英文版) Test method for carrier concentration of silicon epitaxial layers - Capacitance-voltage method |
![]() |
|
![]() |
GB/T 1551-2021 (中英文版) Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method |
![]() |
|
![]() |
GB/T 39145-2020 (中英文版) Test method for the content of surface metal elements on silicon wafers—Inductively coupled plasma mass spectrometry |
![]() |
|
![]() |
GB/T 38976-2020 (中英文版) Test method for the oxygen concentration in silicon materials—Inert gas fusion infrared detection method |
![]() |
|
![]() |
GB/T 12442-2019 (中英文版) Test method for the hydroxyl groups content of silica glass |
![]() |
|
![]() |
GB/T 37385-2019 (中英文版) Test method for chloride content of silicon—Ion chromatography method |
![]() |
|
![]() |
GB/T 37240-2018 (中英文版) Test and evaluation methods for light transmission property of cover glass for crystalline silicon photovoltaic module |
![]() |
|
![]() |
GB/T 19921-2018 (中英文版) Test method for particles on polished silicon wafer surfaces |
![]() |
|
![]() |
GB/T 37049-2018 (中英文版) Test method for the content of metal impurity in electronic grade polysilicon—Inductively coupled-plasma mass spectrometry method |
![]() |
|
![]() |
GB/T 37213-2018 (中英文版) Test method for silicon brick dimension—Laser technology method |
![]() |
|
![]() |
GB/T 4059-2018 (中英文版) Test method for phosphorus content in polycrystalline silicon by zone-melting method under controlled atmosphere |
![]() |
|
![]() |
GB/T 26068-2018 (中英文版) Test method for carrier recombination lifetime in silicon wafers and silicon ingots—Non-contact measurement of photoconductivity decay by microwave reflectance method |
![]() |
|
![]() |
GB/T 36655-2018 (中英文版) Test method for alpha crystalline silicon dioxide content of spherical silica powder for electronic packaging—XRD method |
![]() |
|
![]() |
GB/T 4060-2018 (中英文版) Test method for boron content in polycrystalline silicon by vacuum zone-melting method |
![]() |
|
![]() |
GB/T 1557-2018 (中英文版) Test method for determining interstitial oxygen content in silicon by infrared absorption |
![]() |
|
![]() |
GB/T 34520.2-2017 (中英文版) Test methods for continuous silicon carbide fiber—Part 2:Diameter of single-filament fiber |
![]() |
|
![]() |
GB/T 34520.1-2017 (中英文版) Test methods for continuous silicon carbide fiber—Part 1:Size content of filament yarn |
![]() |
|
![]() |
GB/T 34520.5-2017 (中英文版) Test methods for continuous silicon carbide fiber—Part 5:Tensile properties of single-filament fiber |
![]() |
|
![]() |
GB/T 34520.4-2017 (中英文版) Test methods for continuous silicon carbide fiber—Part 4:Tensile properties of filament yarn |
![]() |
找到:89條目 | [首頁]-[上一頁]-[下一頁]-[尾頁] | 去到: 1 2 3 |