China Silicon epitaxial la GB Standards Search Result |
 |
1. Ready translated GB standards  and Chinese version GB Standards, you can purchase directly in the web page; After receive your payment, we will send the GB Standards PDF file to your Email within
1~3 days.
2. Other English version GB Standards are not ready translated, only after get your order, then we translate them, time usually need 3-5 days . |
|
GB/T 43493.1-2023 Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 1: Defect classification - 英文版 |
 |
|
|
|
GB/T 42905-2023 Testing of Silicon Carbide Epitaxial Layer Thickness Infrared Reflection Method - 英文版 |
|
|
|
|
GB/T 42902-2023 Testing of surface defects of silicon carbide epitaxial wafers Laser scattering method - 英文版 |
|
|
|
|
GB/T 14146-2021 Test method for carrier concentration of Silicon epitaxial layers - Capacitance-voltage method - 英文版 |
|
|
|
|
GB/T 14142-2017 Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique - 英文版 |
|
|
|
|
GB/T 30652-2014 Trichlorosilane for silicon epitaxial - 英文版 |
|
|
|
|
GB/T 14863-2013 Method for net carrier density in Silicon epitaxial layers by voltage-capacitance of gated and ungated diodes - 英文版 |
|
|
|
|
GB/T 14847-2010 Test mothod for thickness of lightly doped Silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance - 英文版 |
|
|
|
|
GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method - 英文版 |
|
|
|
|
GB/T 14141-2009 Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array - 英文版 |
|
| Find out:10Items | To Page of: First -Previous-Next -Last | 1 |
+86-755-2583-1330
