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GB/T 43493.3-2023 Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 3: Photoluminescence detection method of defects - 英文版 |
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GB/T 43493.2-2023 Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 2: Optical detection methods for defects - 英文版 |
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GB/T 1558-2023 Infrared absorption test method for substituted carbon content in silicon - 英文版 |
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GB/T 42789-2023 Test method for silicon wafer surface gloss - 英文版 |
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GB/T 41605-2022 Silicon nitride materials for rolling bearing balls - Test method for indentation fracture resistance at room temperature - Indentation method - 英文版 |
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GB/T 41490-2022 Test method for rolling contact fatigue of silicon nitride ceramics at room temperature ball plate method - 英文版 |
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GB/T 32280-2022 Test method for warp and bow of silicon wafers—Automated non-contact scanning method - 英文版 |
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GB/T 24581-2022 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method - 英文版 |
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GB/T 41765-2022 Test method for dislocation density of silicon carbide single crystal - 英文版 |
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GB/T 41737-2022 Aluminum matrix composites - Test method for volume fraction of silicon carbide - Dissolution method - 英文版 |
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GB/T 40279-2021 Test method for thickness of films on silicon wafer surface—Optical reflection method - 英文版 |
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GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers - Capacitance-voltage method - 英文版 |
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GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method - 英文版 |
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GB/T 39145-2020 Test method for the content of surface metal elements on silicon wafers—Inductively coupled plasma mass spectrometry - 英文版 |
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GB/T 38976-2020 Test method for the oxygen concentration in silicon materials—Inert gas fusion infrared detection method - 英文版 |
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GB/T 12442-2019 Test method for the hydroxyl groups content of silica glass - 英文版 |
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GB/T 37385-2019 Test method for chloride content of silicon—Ion chromatography method - 英文版 |
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GB/T 37240-2018 Test and evaluation methods for light transmission property of cover glass for crystalline silicon photovoltaic module - 英文版 |
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GB/T 19921-2018 Test method for particles on polished silicon wafer surfaces - 英文版 |
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GB/T 37049-2018 Test method for the content of metal impurity in electronic grade polysilicon—Inductively coupled-plasma mass spectrometry method - 英文版 |
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GB/T 37213-2018 Test method for silicon brick dimension—Laser technology method - 英文版 |
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GB/T 4059-2018 Test method for phosphorus content in polycrystalline silicon by zone-melting method under controlled atmosphere - 英文版 |
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GB/T 26068-2018 Test method for carrier recombination lifetime in silicon wafers and silicon ingots—Non-contact measurement of photoconductivity decay by microwave reflectance method - 英文版 |
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GB/T 36655-2018 Test method for alpha crystalline silicon dioxide content of spherical silica powder for electronic packaging—XRD method - 英文版 |
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GB/T 4060-2018 Test method for boron content in polycrystalline silicon by vacuum zone-melting method - 英文版 |
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GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption - 英文版 |
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GB/T 34520.2-2017 Test methods for continuous silicon carbide fiber—Part 2：Diameter of single-filament fiber - 英文版 |
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GB/T 34520.1-2017 Test methods for continuous silicon carbide fiber—Part 1：Size content of filament yarn - 英文版 |
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GB/T 34520.5-2017 Test methods for continuous silicon carbide fiber—Part 5：Tensile properties of single-filament fiber - 英文版 |
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GB/T 34520.4-2017 Test methods for continuous silicon carbide fiber—Part 4：Tensile properties of filament yarn - 英文版 |
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