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GB/T 24581-2022 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method - 英文版 |
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GB/T 41765-2022 Test method for dislocation density of silicon carbide single crystal - 英文版 |
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GB/T 41751-2022 Test method for radius of curvature of crystal surface of gallium nitride single crystal substrate - 英文版 |
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GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method - 英文版 |
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GB/T 9966.17-2021 Test methods for natural stone-Part 17:Determination of resistance to salt crystallization - 英文版 |
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GB/T 8760-2020 Test method for dislocation density of monocrystal gallium arsenide - 英文版 |
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GB/T 5252-2020 Test method for dislocation density of monocrystal germanium - 英文版 |
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GB/T 37983-2019 Testing methods of X-ray diffraction for determining the orientation of crystal materials by rotation - 英文版 |
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GB/T 37240-2018 Test and evaluation methods for light transmission property of cover glass for crystalline silicon photovoltaic module - 英文版 |
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GB/T 4059-2018 Test method for phosphorus content in polycrystalline silicon by zone-melting method under controlled atmosphere - 英文版 |
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GB/T 36655-2018 Test method for alpha crystalline silicon dioxide content of spherical silica powder for electronic packaging—XRD method - 英文版 |
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GB/T 4060-2018 Test method for boron content in polycrystalline silicon by vacuum zone-melting method - 英文版 |
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GB/T 34481-2017 Test method for measuring etch pit density (EPD) in low dislocation density monocrystalline germanium slices - 英文版 |
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GB/T 14142-2017 Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique - 英文版 |
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GB/T 34210-2017 Test method for determining the orientation of sapphire single crystal - 英文版 |
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GB/T 33763-2017 Test method for dislocation density of sapphire single crystal - 英文版 |
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GB/T 35118-2017 Test methods of optical performance for Erbium-doped Yttrium Aluminum Garnet laser crystal - 英文版 |
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GB/T 35306-2017 Test method for carbon and oxygen content of single crystal silicon—Low temperature fourier transform infrared spectrometry - 英文版 |
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GB/T 32278-2015 Test methods for flatness of monocrystalline silicon carbide wafers - 英文版 |
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GB/T 32282-2015 Test method for disoclation density of GaN single crystal—Cathodoluminescence spectroscopy - 英文版 |
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GB/T 32189-2015 Test method for surface roughness of GaN single crystal substrate by atomic force microscope - 英文版 |
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GB/T 19199-2015 Test method for carbon acceptor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy - 英文版 |
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GB/T 17170-2015 Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy - 英文版 |
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GB/T 31568-2015 Standard test method for determination of crystallite size of ZrO2 coatings by Scherrer equation - 英文版 |
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GB/T 31351-2014 Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers - 英文版 |
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GB/T 30653-2014 Test method for crystal quality of III-nitride epitaxial layers - 英文版 |
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GB/T 31093-2014 Test method for stress of monocrystalline sapphire ingot - 英文版 |
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GB/T 30868-2014 Test method for measuring micropipe density of monocrystalline silicon carbide wafers―Chemically etching - 英文版 |
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GB/T 30867-2014 Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers - 英文版 |
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GB/T 30866-2014 Test method for measuring diameter of monocrystalline silicon carbide wafers - 英文版 |
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