China Semiconductor device GB Standards Search Result |
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2. Other English version GB Standards are not ready translated, only after get your order, then we translate them, time usually need 3-5 days . |
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GB/T 13062-2018 Semiconductor devices—Integrated circuits—Part 21-1:Blank detail specification for film integrated circuits and hybrid film integrated circuits on the basis of the qualification approval procedures - 英文版 |
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GB/T 36360-2018 Semiconductor optoelectronic devices--Blank detail specification for middle power light-emitting diodes - 英文版 |
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GB/T 36358-2018 Semiconductor optoelectronic devices—Blank detail specification for power light-emitting diodes - 英文版 |
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GB/T 36359-2018 Semiconductor optoelectronic devices—Blank detail specification for lower power light-emitting diodes - 英文版 |
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GB/T 15879.5-2018 Mechanical standardization of Semiconductor devices—Part 5: Recommendations applying to tape automated bonding(TAB) of integrated circuits - 英文版 |
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GB/T 4937.22-2018 Semiconductor devices—Mechanical and climatic test methods—Part 22: Bond strength - 英文版 |
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GB/T 4937.21-2018 Semiconductor devices—Mechanical and climatic test methods—Part 21: Solderability - 英文版 |
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GB/T 4937.14-2018 Semiconductor devices—Mechanical and climatic test methods—Part 14: Robustness of terminations（lead integrity） - 英文版 |
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GB/T 4937.201-2018 Semiconductor devices—Mechanical and climatic test methods—Part 20-1: Handling, packing, labelling and shipping of surface-mount devices sensitive to the combined effect of moisture and soldering heat - 英文版 |
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GB/T 4937.13-2018 Semiconductor devices—Mechanical and climatic test methods—Part 13: Salt atmosphere - 英文版 |
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GB/T 4937.20-2018 Semiconductor devices—Mechanical and climatic test methods—Part 20: Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat - 英文版 |
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GB/T 4937.15-2018 Semiconductor devices—Mechanical and climatic test methods—Part 15: Resistance to soldering temperature for through-hole mounted devices - 英文版 |
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GB/T 4937.12-2018 Semiconductor devices—Mechanical and climatic test methods—Part 12: Vibration, variable frequency - 英文版 |
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GB/T 4937.18-2018 Semiconductor devices—Mechanical and climatic test methods—Part 18: Ionizing radiation (total dose) - 英文版 |
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GB/T 4937.19-2018 Semiconductor devices—Mechanical and climatic test methods—Part 19: Die shear strength - 英文版 |
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GB/T 4937.30-2018 Semiconductor devices—Mechanical and climatic test methods—Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing - 英文版 |
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GB/T 4937.17-2018 Semiconductor devices—Mechanical and climatic test methods—Part 17: Neutron irradiation - 英文版 |
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GB/T 4937.11-2018 Semiconductor devices—Mechanical and climatic test methods—Part 11: Rapid change of temperature—Two-fluid-bath method - 英文版 |
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GB/T 15651.4-2017 Semiconductor devices—Discrete devices—Part 5-4:Optoelectronic devices—Semiconductor lasers - 英文版 |
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GB/T 249-2017 The rule of type designation for discrete Semiconductor devices - 英文版 |
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GB/T 32817-2016 Semiconductor devices—Micro-electromechanical devices—Generic specification for MEMS - 英文版 |
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GB/T 13539.4-2016 Low-voltage fuses—Part 4: Supplementary requirements for fuse-links for the protection of Semiconductor devices - 英文版 |
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GB/T 4023-2015 Semiconductor devices—Discrete devices and integrated circuits— Part 2: Rectifier diodes - 英文版 |
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GB/T 15291-2015 Semiconductor devices—Part 6: Thyristors - 英文版 |
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GB/T 29332-2012 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors(IGBT) - 英文版 |
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GB/T 13973-2012 General specification test methods for Semiconductor device curve tracers - 英文版 |
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GB/T 4937.4-2012 Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST) - 英文版 |
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GB/T 4937.3-2012 Semiconductor devices - Mechanical and climatic tests methods - Part 3: External visual examination - 英文版 |
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GB/T 13539.4-2009 Low-voltage fuses - Part 4: Supplementary requirements for fuse-links for the protection of Semiconductor devices - 英文版 |
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GB/T 21039.1-2007 Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors - Microwave field effect transistors - Blank detail specification - 英文版 |
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