China Specification for mi GB Standards Search Result |
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1. Ready translated GB standards ![]() 2. Other English version GB Standards are not ready translated, only after get your order, then we translate them, time usually need 3-5 days . |
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GB/T 18569.1-2001 Safety of machinery--Reduction of risks to health from hazardous substances emitted by machinery--Part 1:Principles and specifications for machinery manufacturers - 英文版 |
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GB/T 18500.2-2001 Semiconductor devices--Integrated circuits--Part 4:Interface integrated circuits--Section 2:Blank detail specification for linear analogue-to-digital converters(ADC) - 英文版 |
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GB/T 18500.1-2001 Semiconductor devices--Integrated circuits--Part 4:Interface integrated circuits--Section 1:Blank detail specification for linear digital-to-analogue converters(DAC) - 英文版 |
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GB/T 18341-2001 Specifications of survey for geological and mineral resources exploration - 英文版 |
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GB/T 18338.1-2001 Business machines duplicators--Minimum information to be included in specification sheets - 英文版 |
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GB/T 18289-2000 General specification of nickel-cadmium battery for cellular phone - 英文版 |
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GB/T 18275.2-2000 Specifications for automobile braking transmission device being overhauled--Hydraulic braking - 英文版 |
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GB/T 18275.1-2000 Specifications for automobile braking transmission device being overhauled--Air braking - 英文版 |
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GB/T 4588.12-2000 Specification for mass laminationpanels (semi-manufactured multilayer printed boards) - 英文版 |
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GB/T 17737.2-2000 Radio-frequency cables--Part 2:Sectional specification for semi-rigid radio-frequency and coaxial cables with polytetrafluoroethylene(PTFE) insulation - 英文版 |
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GB/T 6588-2000 Semiconductor devices--Discrete devices--Part 3:Signal(including switching) and regulator diodes--Section One--Blank detail specification for signal diodes,switching diodes and controlled-avalanche diodes - 英文版 |
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GB/T 9813-2000 Generic Specification for microcomputers - 英文版 |
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GB 18196-2000 Specifications of the medical examinations for the overexposed individuals - 英文版 |
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GB/T 18049-2000 Moderate thermal environments--Determination of the PMV and PPD indices and specification of the conditions for thermal comfort - 英文版 |
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GB/T 18034-2000 Specification for the platinum rhodium thermocouple thin wires used in mini-thermocouples - 英文版 |
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GB/T 5965-2000 Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits--Section one--Blank detail specification for bipolar monolithic digital integrated circuit gates(excluding uncommitted logic arrays) - 英文版 |
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GB/T 17881-1999 Technical specifications of SDH transmission interface for broadcasting and television optical backbone network - 英文版 |
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GB/T 9404-1999 Technical specifications of feeder systems for microwave-relay communication - 英文版 |
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GB/T 12560-1999 Semiconductor devices--Sectional specification for discrete devices - 英文版 |
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GB/T 17772-1999 Earth-moving machinery--Laboratory evaluations of protective structures--Specifications for deflection-limiting volume - 英文版 |
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GB/T 17580.1-1998 Information technology--Open systems interconnection--Virtual terminal basic class protocol--Part 1:Specification - 英文版 |
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GB/T 9424-1998 Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits--Section Five:Blank detail specification for complementary MOS digital inte-grated circuits,series 4000B and 4000UB - 英文版 |
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GB/T 7576-1998 Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section Four:Blank detail specification for case-rated bipolartransistors for high-frequency amplification - 英文版 |
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GB/T 6590-1998 Semiconductor devices--Discrete devices--Part6:Thyristors--Section Two:Blank detail specification for bidirectional triode thyristors(triacs),ambient or case-rated,up to 100A - 英文版 |
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GB/T 6352-1998 Semiconductor devices--Discrete devices--Part 6:Thyristors--Section One:Blank detail specification for reverse blocking triode thyristors,ambient or case-rated,up to 100A - 英文版 |
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GB/T 6351-1998 Semiconductor devices--Discrete devices--Part 2:Rectifier diodes--Section One:Blank detail specification for rectifier diodes(including avalanche recti fier diodes),ambient and case-rated,up to 100A - 英文版 |
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GB/T 6219-1998 Semiconductor devices--Discrete devices--Part 8:Field-effect transistors--Section One:Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz - 英文版 |
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GB/T 17572-1998 Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits--Section Four:Family specification for complementary MOS digital integrated circuits,series 4000B and 4000UB - 英文版 |
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GB/T 6262-1998 Fixed capacitors for use in electronic equipment--Part 5:Blank detail specification--Fixed mica dielectric d.c.capacitors witha rated voltage not exceeding 3000V--Assessment level E - 英文版 |
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GB/T 6261-1998 Fixed capacitors for use in electronic equipment--Part 5:Sectional specification--Fixed mica dielectric d.c.capacitors witha rated voltage not exceeding 3000V--Selection of methods of test and generalrequirements - 英文版 |
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