Home   GB Standards Search   GB Standards Index GB Standards Testing   GB Standards Compliance Pricing & Payment Contact Us
 

China Specification for mi GB Standards Search Result

1. Ready translated GB standards and Chinese version GB Standards, you can purchase directly in the web page; After receive your payment, we will send the GB Standards PDF file to your Email within 1~3 days.
2. Other English version GB Standards are not ready translated, only after get your order, then we translate them, time usually need 3-5 days .
       
GB/T 18569.1-2001
Safety of machinery--Reduction of risks to health from hazardous substances emitted by machinery--Part 1:Principles and specifications for machinery manufacturers
- 英文版
GB/T 18500.2-2001
Semiconductor devices--Integrated circuits--Part 4:Interface integrated circuits--Section 2:Blank detail specification for linear analogue-to-digital converters(ADC)
- 英文版
GB/T 18500.1-2001
Semiconductor devices--Integrated circuits--Part 4:Interface integrated circuits--Section 1:Blank detail specification for linear digital-to-analogue converters(DAC)
- 英文版
GB/T 18341-2001
Specifications of survey for geological and mineral resources exploration
- 英文版
GB/T 18338.1-2001
Business machines duplicators--Minimum information to be included in specification sheets
- 英文版
GB/T 18289-2000
General specification of nickel-cadmium battery for cellular phone
- 英文版
GB/T 18275.2-2000
Specifications for automobile braking transmission device being overhauled--Hydraulic braking
- 英文版
GB/T 18275.1-2000
Specifications for automobile braking transmission device being overhauled--Air braking
- 英文版
GB/T 4588.12-2000
Specification for mass laminationpanels (semi-manufactured multilayer printed boards)
- 英文版
GB/T 17737.2-2000
Radio-frequency cables--Part 2:Sectional specification for semi-rigid radio-frequency and coaxial cables with polytetrafluoroethylene(PTFE) insulation
- 英文版
GB/T 6588-2000
Semiconductor devices--Discrete devices--Part 3:Signal(including switching) and regulator diodes--Section One--Blank detail specification for signal diodes,switching diodes and controlled-avalanche diodes
- 英文版
GB/T 9813-2000
Generic Specification for microcomputers
- 英文版
GB 18196-2000
Specifications of the medical examinations for the overexposed individuals
- 英文版
GB/T 18049-2000
Moderate thermal environments--Determination of the PMV and PPD indices and specification of the conditions for thermal comfort
- 英文版
GB/T 18034-2000
Specification for the platinum rhodium thermocouple thin wires used in mini-thermocouples
- 英文版
GB/T 5965-2000
Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits--Section one--Blank detail specification for bipolar monolithic digital integrated circuit gates(excluding uncommitted logic arrays)
- 英文版
GB/T 17881-1999
Technical specifications of SDH transmission interface for broadcasting and television optical backbone network
- 英文版
GB/T 9404-1999
Technical specifications of feeder systems for microwave-relay communication
- 英文版
GB/T 12560-1999
Semiconductor devices--Sectional specification for discrete devices
- 英文版
GB/T 17772-1999
Earth-moving machinery--Laboratory evaluations of protective structures--Specifications for deflection-limiting volume
- 英文版
GB/T 17580.1-1998
Information technology--Open systems interconnection--Virtual terminal basic class protocol--Part 1:Specification
- 英文版
GB/T 9424-1998
Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits--Section Five:Blank detail specification for complementary MOS digital inte-grated circuits,series 4000B and 4000UB
- 英文版
GB/T 7576-1998
Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section Four:Blank detail specification for case-rated bipolartransistors for high-frequency amplification
- 英文版
GB/T 6590-1998
Semiconductor devices--Discrete devices--Part6:Thyristors--Section Two:Blank detail specification for bidirectional triode thyristors(triacs),ambient or case-rated,up to 100A
- 英文版
GB/T 6352-1998
Semiconductor devices--Discrete devices--Part 6:Thyristors--Section One:Blank detail specification for reverse blocking triode thyristors,ambient or case-rated,up to 100A
- 英文版
GB/T 6351-1998
Semiconductor devices--Discrete devices--Part 2:Rectifier diodes--Section One:Blank detail specification for rectifier diodes(including avalanche recti fier diodes),ambient and case-rated,up to 100A
- 英文版
GB/T 6219-1998
Semiconductor devices--Discrete devices--Part 8:Field-effect transistors--Section One:Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz
- 英文版
GB/T 17572-1998
Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits--Section Four:Family specification for complementary MOS digital integrated circuits,series 4000B and 4000UB
- 英文版
GB/T 6262-1998
Fixed capacitors for use in electronic equipment--Part 5:Blank detail specification--Fixed mica dielectric d.c.capacitors witha rated voltage not exceeding 3000V--Assessment level E
- 英文版
GB/T 6261-1998
Fixed capacitors for use in electronic equipment--Part 5:Sectional specification--Fixed mica dielectric d.c.capacitors witha rated voltage not exceeding 3000V--Selection of methods of test and generalrequirements
- 英文版

Find out:595Items   |  To Page of: First -Previous-Next -Last  | [12] [13] [14] [15] [16] [17] [18]

 

1F Zhongmao Building, No.1 Beizhan Road, Luohu District, Shenzhen City, China
+86-755-2583-1330        info@transcustoms.com 
©  Copyright 2001-2025  RJS MedTech Inc. All Rights Reserved