China Blank detail-specifi GB Standards Search Result

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	GB/T 18904.3-2002 Semiconductor devices--Part 12-3:Optoelectronic devices--Blank detail specification for light-emitting diodes--Display application - 英文版
	GB/T 18904.2-2002 Semiconductor devices--Part 12-2:Optoelectronic devices--Blank detail specification for laser diodes modules with pigtail for fiber optic systems or sub-systems - 英文版
	GB/T 18904.1-2002 Semiconductor devices--Part 12-1:Optoelectronic devices--Blank detail specification for light emitting/infrared emitting diodes with/without pigtail for fiber optic systems or sub-systems - 英文版
	GB/T 18500.2-2001 Semiconductor devices--Integrated circuits--Part 4:Interface integrated circuits--Section 2:Blank detail specification for linear analogue-to-digital converters(ADC) - 英文版
	GB/T 18500.1-2001 Semiconductor devices--Integrated circuits--Part 4:Interface integrated circuits--Section 1:Blank detail specification for linear digital-to-analogue converters(DAC) - 英文版
	GB/T 12853-2001 Blank detail specification for continuous wave magnetrons - 英文版
	GB/T 6588-2000 Semiconductor devices--Discrete devices--Part 3:Signal(including switching) and regulator diodes--Section One--Blank detail specification for signal diodes，switching diodes and controlled-avalanche diodes - 英文版
	GB/T 5965-2000 Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits--Section one--Blank detail specification for bipolar monolithic digital integrated circuit gates(excluding uncommitted logic arrays) - 英文版
	GB/T 9424-1998 Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits--Section Five:Blank detail specification for complementary MOS digital inte-grated circuits，series 4000B and 4000UB - 英文版
	GB/T 7576-1998 Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section Four:Blank detail specification for case-rated bipolartransistors for high-frequency amplification - 英文版
	GB/T 6590-1998 Semiconductor devices--Discrete devices--Part6:Thyristors--Section Two:Blank detail specification for bidirectional triode thyristors(triacs)，ambient or case-rated，up to 100A - 英文版
	GB/T 6352-1998 Semiconductor devices--Discrete devices--Part 6:Thyristors--Section One:Blank detail specification for reverse blocking triode thyristors，ambient or case-rated，up to 100A - 英文版
	GB/T 6351-1998 Semiconductor devices--Discrete devices--Part 2:Rectifier diodes--Section One:Blank detail specification for rectifier diodes(including avalanche recti fier diodes)，ambient and case-rated，up to 100A - 英文版
	GB/T 6219-1998 Semiconductor devices--Discrete devices--Part 8:Field-effect transistors--Section One:Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz - 英文版
	GB/T 6262-1998 Fixed capacitors for use in electronic equipment--Part 5:Blank detail specification--Fixed mica dielectric d.c.capacitors witha rated voltage not exceeding 3000V--Assessment level E - 英文版
	GB/T 13420-1998 Electromechanical switches for use in electronic equipment--Part 6:Sectional specification for sensitive switches--Section 1:Blank detail specification - 英文版
	GB/T 17210-1998 Electromechanical switches for use in electronic equipment--Part 2:Sectional specification for rotary switches--Sectional 1:Blank detail specification - 英文版
	GB/T 17208-1998 Fixed capacitors for use in electronic equipment--Part 18:Blank detail specification--Fixed aluminium electrolytic chip capacitors with non-solid electrolyte--Assessment level E - 英文版
	GB/T 12865-1997 Piezoelectric ceramic filters for use in electronic equipment--A specification in the quality assessment system forelectronic components--Part 2:Sectional specification--Qualification approval--Section 1:Blank detail specification--Assessment level E - 英文版
	GB/T 10195.2-1997 Varistors for use in electronic equipment--Part 2:Blank detail specification for zinc oxide surge suppression varistors--Assessment level E - 英文版
	GB/T 10195.1-1997 Varistors for use in electronic equipment--Part 2:Blank detail specification for silicon carbide surge suppression varistors--Assessment level E - 英文版
	GB/T 17035-1997 Fixed resistors for use in electronic equipment--Part 4:Blank detailspecification--Fixed power resistors， heat-sink types--Assessment level H - 英文版
	GB/T 17034-1997 Fixed resistors for use in electronic equipment--Part 2:Blank detail specification--Fixed low-power non-wirewound resistors--Assessment level F - 英文版
	GB/T 17029-1997 Potentiometers for use in electronic equipment--Part 5:Blank detail specification--Single-turn rotary low-power potentiometers--Assessment level F - 英文版
	GB/T 17028-1997 Potentiometers for use in electronic equipment--Part 5:Blank detail specification--Single-turn rotary low-power potentiometers--Assessment level E - 英文版
	GB/T 17027-1997 Potentiometers for use in electronic equipment--Part 4:Blank detail specification--Single-turn rotary power potentiometers--Assessment level F - 英文版
	GB/T 17026-1997 Potentiometers for use in electronic equipment--Part 4:Blank detail specification--Single-turn rotary power potentiometers--Assessment level E - 英文版
	GB/T 17024-1997 Semiconductor devices--integratedcircuits--Part 2:Digital integrated circuits--Section three--Blank detail specification for HCMOS digital integrated circuits series 54/74HC，54/74HCT，54/74HCU - 英文版
	GB/T 16894-1997 Blank detail specification for rectifier diodes (including avalanche rectifier diodes)，ambient and case-rated，for currents greater than 100A - 英文版
	GB/T 7577-1996 Blank detail specification for case-rated bipolar transistors for low-frequency amplification - 英文版

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