China Semiconductor device GB Standards Search Result |
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2. Other English version GB Standards are not ready translated, only after get your order, then we translate them, time usually need 3-5 days . |
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GB/T 11499-2001 Letter symbols for discrete Semiconductor devices - 英文版 |
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GB/T 6588-2000 Semiconductor devices--Discrete devices--Part 3:Signal(including switching) and regulator diodes--Section One--Blank detail specification for signal diodes，switching diodes and controlled-avalanche diodes - 英文版 |
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GB/T 5965-2000 Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits--Section one--Blank detail specification for bipolar monolithic digital integrated circuit gates(excluding uncommitted logic arrays) - 英文版 |
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GB/T 17940-2000 Semiconductor devices--Integrated circuits--Part 3:Analogue integrated circuits - 英文版 |
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GB/T 12560-1999 Semiconductor devices--Sectional specification for discrete devices - 英文版 |
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GB/T 9424-1998 Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits--Section Five:Blank detail specification for complementary MOS digital inte-grated circuits，series 4000B and 4000UB - 英文版 |
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GB/T 7576-1998 Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section Four:Blank detail specification for case-rated bipolartransistors for high-frequency amplification - 英文版 |
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GB/T 6590-1998 Semiconductor devices--Discrete devices--Part6:Thyristors--Section Two:Blank detail specification for bidirectional triode thyristors(triacs)，ambient or case-rated，up to 100A - 英文版 |
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GB/T 6352-1998 Semiconductor devices--Discrete devices--Part 6:Thyristors--Section One:Blank detail specification for reverse blocking triode thyristors，ambient or case-rated，up to 100A - 英文版 |
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GB/T 6351-1998 Semiconductor devices--Discrete devices--Part 2:Rectifier diodes--Section One:Blank detail specification for rectifier diodes(including avalanche recti fier diodes)，ambient and case-rated，up to 100A - 英文版 |
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GB/T 6219-1998 Semiconductor devices--Discrete devices--Part 8:Field-effect transistors--Section One:Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz - 英文版 |
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GB/T 6217-1998 Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section One:Blank detail speci-fication for ambient-rated bipolar transistors for low and high frequency amplification - 英文版 |
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GB/T 17574-1998 Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits - 英文版 |
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GB/T 17573-1998 Semiconductor devices--Discrete devices and integrated circuits--Part 1:General - 英文版 |
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GB/T 17572-1998 Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits--Section Four:Family specification for complementary MOS digital integrated circuits，series 4000B and 4000UB - 英文版 |
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GB/T 4023-1997 Semiconductor devices--Discrete devices and integrated circuits--Part 2:Rectifier diodes - 英文版 |
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GB/T 17024-1997 Semiconductor devices--integratedcircuits--Part 2:Digital integrated circuits--Section three--Blank detail specification for HCMOS digital integrated circuits series 54/74HC，54/74HCT，54/74HCU - 英文版 |
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GB/T 17023-1997 Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits--Section two--Family specification for HCMOS digital integrated circuits series 54/74HC，54/74HCT，54/74HCU - 英文版 |
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GB/T 16464-1996 Semiconductor devices--Integrated circuits--Part 1:General - 英文版 |
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GB/T 15879-1995 Mechanical standardization of Semiconductor devices--Part 5:Recommendations applying to tape automated bonding (TAB) of integrated circuits - 英文版 |
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GB/T 6571-1995 Semiconductordevices--Discrete devices--Part 3:Signal(including switching)and regulator diodes - 英文版 |
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GB/T 15651-1995 Semiconductor devices--Discrete devices and integrated circuits--Part 5:Optoelectronic devices - 英文版 |
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GB/T 4587-1994 Semiconductor discrete devices and integrated circuits--Part 7:Bipolar transistors - 英文版 |
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GB/T 4586-1994 Semiconductor devices--Discrete devices--Part 8:Field-effect transistors - 英文版 |
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GB/T 15291-1994 Semiconductor devices--Part 6:Thyristors - 英文版 |
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GB/T 2900.32-1994 Electrotechnical terminology--Power Semiconductor device - 英文版 |
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GB/T 12565-1990 Semiconductor devices--Sectional specification for optoelectronic devices - 英文版 |
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GB/T 249-1989 The rule of type designation for discrete Semiconductor devices - 英文版 |
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GB/T 7581-1987 Dimensions of outlines for semiconductor discrete devices - 英文版 |
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GB/T 7423.3-1987 Heat sink of Semiconductor devices--Heat sink， staggered fingers shapes - 英文版 |
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