China Discrete semiconduct GB Standards Search Result

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	GB/T 43366-2023 General specification for semiconductor discrete devices for aerospace applications 宇航用半导体分立器件通用规范 - 英文版
	GB/T 4587-2023 Semiconductor Devices Discrete Devices Part 7: Bipolar Transistors 半导体器件分立器件第7部分：双极型晶体管 - 英文版
	GB/T 37312.1-2019 Process management for avionics—Electronic components for aerospace, defence and high performance (ADHP) applications—Part 1: General requirements for high reliability integrated circuits and Discrete semiconductors 航空电子过程管理航空航天、国防及其他高性能应用领域（ADHP）电子元器件第1部分：高可靠集成电路与分立半导体器件通用要求 - 英文版
	GB/T 15651.4-2017 Semiconductor devices—Discrete devices—Part 5-4:Optoelectronic devices—Semiconductor lasers 半导体器件分立器件第5-4部分:光电子器件半导体激光器 - 英文版
	GB/T 249-2017 The rule of type designation for Discrete semiconductor devices 半导体分立器件型号命名方法 - 英文版
	GB/T 4023-2015 Semiconductor devices—Discrete devices and integrated circuits— Part 2: Rectifier diodes 半导体器件分立器件和集成电路第2部分：整流二极管 - 英文版
	GB/T 29332-2012 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors(IGBT) 半导体器件分立器件第9部分：绝缘栅双极晶体管(IGBT) - 英文版
	GB/T 21039.1-2007 Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors - Microwave field effect transistors - Blank detail specification 半导体器件分立器件第4-1部分：微波二极管和晶体管微波场效应晶体管空白详细规范 - 英文版
	GB/T 4589.1-2006 Semiconductor devices - Part 10: Generic specification for discrete devices and integrated circuits 半导体器件第10部分：分立器件和集成电路总规范 - 英文版
	GB/T 20516-2006 Semiconductor devices - Discrete devices - Part 4: Microwave devices 半导体器件分立器件第4部分：微波器件 - 英文版
	GB/T 13151-2005 Semiconductor devices Discrete devices Part 6:Thyristors Section Three-Blank detail specification for reverse blocking triode thyristors,ambient and case-rated,for currents greater than 100A 半导体器件分立器件第6部分:晶闸管第3篇电流大于 100A、环境和管壳额定的反向阻断三极晶闸管空白详细规范 - 英文版
	GB/T 15651.3-2003 Discrete semiconductor devices and integrated circuits--Part 5-3:Optoelectronic devices--Measuring methods 半导体分立器件和集成电路第5-3部分:光电子器件测试方法 - 英文版
	GB/T 15651.2-2003 Discrete semiconductor devices and integrated circuits--Part 5-2:Optoelectronic devices--Essential ratings and characteristics 半导体分立器件和集成电路第5-2部分:光电子器件基本额定值和特性 - 英文版
	GB/T 6589-2002 Semiconductordevices--Discrete devices--Part 3-2:Signal (including switching) and regulator diodes--Blank detail specification for voltage-regulator diodes and voltage-reference diodes (excluding temperature-compensated precision reference diodes) 半导体器件分立器件第3-2部分:信号(包括开关)和调整二极管电压调整二极管和电压基准二极管(不包括温度补偿精密基准二极管) 空白详细规范 - 英文版
	GB/T 11499-2001 Letter symbols for Discrete semiconductor devices 半导体分立器件文字符号 - 英文版
	GB/T 6588-2000 Semiconductor devices--Discrete devices--Part 3:Signal(including switching) and regulator diodes--Section One--Blank detail specification for signal diodes，switching diodes and controlled-avalanche diodes 半导体器件分立器件第3部分:信号(包括开关)和调整二极管第1篇信号二极管、开关二极管和可控雪崩二极管空白详细规范 - 英文版
	GB/T 12560-1999 Semiconductor devices--Sectional specification for discrete devices 半导体器件分立器件分规范 - 英文版
	GB/T 7576-1998 Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section Four:Blank detail specification for case-rated bipolartransistors for high-frequency amplification 半导体器件分立器件第7部分:双极型晶体管第四篇高频放大管壳额定双极型晶体管空白详细规范 - 英文版
	GB/T 6590-1998 Semiconductor devices--Discrete devices--Part6:Thyristors--Section Two:Blank detail specification for bidirectional triode thyristors(triacs)，ambient or case-rated，up to 100A 半导体器件分立器件第6部分:闸流晶体管第二篇 100A以下环境或管壳额定的双向三极闸流晶体管空白详细规范 - 英文版
	GB/T 6352-1998 Semiconductor devices--Discrete devices--Part 6:Thyristors--Section One:Blank detail specification for reverse blocking triode thyristors，ambient or case-rated，up to 100A 半导体器件分立器件第6部分:闸流晶体管第一篇 100A以下环境或管壳额定反向阻断三极闸流晶体管空白详细规范 - 英文版
	GB/T 6351-1998 Semiconductor devices--Discrete devices--Part 2:Rectifier diodes--Section One:Blank detail specification for rectifier diodes(including avalanche recti fier diodes)，ambient and case-rated，up to 100A 半导体器件分立器件第2部分:整流二极管第一篇 100A以下环境或管壳额定整流二极管(包括雪崩整流二极管)空白详细规范 - 英文版
	GB/T 6219-1998 Semiconductor devices--Discrete devices--Part 8:Field-effect transistors--Section One:Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz 半导体器件分立器件第8部分:场效应晶体管第一篇 1 GHz、5 W以下的单栅场效应晶体管空白详细规范 - 英文版
	GB/T 6217-1998 Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section One:Blank detail speci-fication for ambient-rated bipolar transistors for low and high frequency amplification 半导体器件分立器件第7部分:双极型晶体管第一篇高低频放大环境额定的双极型晶体管空白详细规范 - 英文版
	GB/T 17573-1998 Semiconductor devices--Discrete devices and integrated circuits--Part 1:General 半导体器件分立器件和集成电路第1部分:总则 - 英文版
	GB/T 4023-1997 Semiconductor devices--Discrete devices and integrated circuits--Part 2:Rectifier diodes 半导体器件分立器件和集成电路第2部分:整流二极管 - 英文版
	GB/T 6571-1995 Semiconductordevices--Discrete devices--Part 3:Signal(including switching)and regulator diodes 半导体器件分立器件第3部分:信号(包括开关)和调整二极管 - 英文版
	GB/T 15651-1995 Semiconductor devices--Discrete devices and integrated circuits--Part 5:Optoelectronic devices 半导体器件分立器件和集成电路第5部分:光电子器件 - 英文版
	GB/T 4587-1994 Semiconductor discrete devices and integrated circuits--Part 7:Bipolar transistors 半导体分立器件和集成电路第7部分:双极型晶体管 - 英文版
	GB/T 4586-1994 Semiconductor devices--Discrete devices--Part 8:Field-effect transistors 半导体器件分立器件第8部分:场效应晶体管 - 英文版
	GB/T 249-1989 The rule of type designation for Discrete semiconductor devices 半导体分立器件型号命名方法 - 英文版
	GB/T 7581-1987 Dimensions of outlines for semiconductor discrete devices 半导体分立器件外形尺寸 - 英文版

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