![](../images/GB-logo.png) |
![](../images/GB-txt.png)
NATIONAL STANDARD OF THE PEOPLE'S REPUBLIC OF CHINA
|
GB/T 14863-2013
|
|
Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes |
|
|
|
Issued Date: |
|
Implemented Date: |
|
Issued by: |
|
The Standardization Administration of the People's Republic of China |
|
|
|
|
Thanks for your interest in
"GB/T 14863-2013" standard !
This GB standard english version is not ready translated, only after get your order, then we translate it, time usually need more 3-5 days .
|
![](../images/support.png) |
GB Standard Code |
GB/T 14863-2013 |
Standard Category |
China National Standards |
GB Standard English Title |
Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes |
GB Standard Chinese Title |
用栅控和非栅控二极管的电压电容关系测定硅外延层中净载流子浓度的方法 |
Chinese Version Price |
$5.00 per page |
English Translation Fee |
About $15~$30 per 1 page (1,000 words) |
Sale Price
(30~50% off) |
Inquire us for detail price
|
|