China Transistor GB Standards Search Result

and Chinese version GB Standards, you can purchase directly in the web page; After receive your payment, we will send the GB Standards PDF file to your Email within 1~3 days.
2. Other English version GB Standards are not ready translated, only after get your order, then we translate them, time usually need 3-5 days .


	GB/T 4587-2023 Semiconductor Devices Discrete Devices Part 7: Bipolar Transistors - 英文版
	GB/T 31958-2023 Amorphous silicon thin film Transistor liquid crystal display substrate glass - 英文版
	GB/T 37403-2019 Tetramethylammonium hydroxide developer for thin film Transistor-liquid crystal display(TFT-LCD) - 英文版
	GB/T 10067.34-2015 Basic specifications for electroheat installations—Part 34：Transistor type high frequency induction heating installation - 英文版
	GB 51136-2015 Code for design of thin film Transistor liquid crystal display plant - 英文版
	GB/T 31958-2015 Substrate glass for thin film Transistor liquid crystal display device - 英文版
	GB/T 29332-2012 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar Transistors(IGBT) - 英文版
	GB/T 21039.1-2007 Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and Transistors - Microwave field effect transistors - Blank detail specification - 英文版
	GB/T 7576-1998 Semiconductor devices--Discrete devices--Part 7:Bipolar Transistors--Section Four:Blank detail specification for case-rated bipolartransistors for high-frequency amplification - 英文版
	GB/T 6219-1998 Semiconductor devices--Discrete devices--Part 8:Field-effect Transistors--Section One:Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz - 英文版
	GB/T 6217-1998 Semiconductor devices--Discrete devices--Part 7:Bipolar Transistors--Section One:Blank detail speci-fication for ambient-rated bipolar transistors for low and high frequency amplification - 英文版
	GB/T 7577-1996 Blank detail specification for case-rated bipolar Transistors for low-frequency amplification - 英文版
	GB/T 6218-1996 Blank detail specification for bipolar Transistors for switching applications - 英文版
	GB/T 16468-1996 Series programmes for static induction Transistors - 英文版
	GB/T 15449-1995 Blank detail-specification for field-effect Transistors for case-rated switching application - 英文版
	GB/T 4587-1994 Semiconductor discrete devices and integrated circuits--Part 7:Bipolar Transistors - 英文版
	GB/T 4586-1994 Semiconductor devices--Discrete devices--Part 8:Field-effect Transistors - 英文版
	GB/T 12300-1990 Test methods of safe operating area for power Transistors - 英文版

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