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China triode GB Standards Search Result

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GB/T 13151-2005
Semiconductor devices Discrete devices Part 6:Thyristors Section Three-Blank detail specification for reverse blocking triode thyristors,ambient and case-rated,for currents greater than 100A
- 英文版
GB/T 13150-2005
Semiconductor devices Discret devices Blank detail specification for bidirectional triode thyristors(triacs),ambient and case-rated,for currents greater than 100A
- 英文版
GB/T 6590-1998
Semiconductor devices--Discrete devices--Part6:Thyristors--Section Two:Blank detail specification for bidirectional triode thyristors(triacs),ambient or case-rated,up to 100A
- 英文版
GB/T 6352-1998
Semiconductor devices--Discrete devices--Part 6:Thyristors--Section One:Blank detail specification for reverse blocking triode thyristors,ambient or case-rated,up to 100A
- 英文版
GB/T 15292-1994
Measuring methods for thyristor--Reverse conducting triode thyristor
- 英文版
GB/T 13152-1991
Blank detail specification for reverse conducting triode thyristors,ambient or case-rated,5A/5A and above
- 英文版
GB/T 6256-1986
Blank detail specification forindustrial heating triodes
- 英文版

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