China Ambient GB Standards Search Result

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	GB/T 2406.2-2009 Plastics - Determination of burning behaviour by oxygen index - Part 2: Ambient-temperature test - 英文版
	GB/T 11049-2008 Burning behaviour of carpets - Tablet test at Ambient temperature - 英文版
	GB/T 1685-2008 Rubber，vulcanized or thermoplastic - Determination of stress relaxation in compression at Ambient and at elevated temperatures - 英文版
	GB/T 14318-2008 Radiation protection instrumentation - Neutron Ambient dose equivalent(rate) meters - 英文版
	GB/T 3001-2007 Refractory products - Determination of modulus of rupture at Ambient temperature - 英文版
	GB/T 10128-2007 Metallic materials - Torsion test at Ambient temperature - 英文版
	GB/T 5564-2006 Rubber and plastics hoses - SubAmbient temperature flexibility tests - 英文版
	GB/T 20673-2006 Cellular plastics - Determination of the coefficient of linear thermal expansion of rigid materials at sub-Ambient temperatures - 英文版
	GB/T 7314-2005 Metallic materials-Compression testing at Ambient temperature - 英文版
	GB/T 13151-2005 Semiconductor devices Discrete devices Part 6:Thyristors Section Three-Blank detail specification for reverse blocking triode thyristors,Ambient and case-rated,for currents greater than 100A - 英文版
	GB/T 13150-2005 Semiconductor devices Discret devices Blank detail specification for bidirectional triode thyristors(triacs),Ambient and case-rated,for currents greater than 100A - 英文版
	GB/T 6590-1998 Semiconductor devices--Discrete devices--Part6:Thyristors--Section Two:Blank detail specification for bidirectional triode thyristors(triacs)，Ambient or case-rated，up to 100A - 英文版
	GB/T 6352-1998 Semiconductor devices--Discrete devices--Part 6:Thyristors--Section One:Blank detail specification for reverse blocking triode thyristors，Ambient or case-rated，up to 100A - 英文版
	GB/T 6351-1998 Semiconductor devices--Discrete devices--Part 2:Rectifier diodes--Section One:Blank detail specification for rectifier diodes(including avalanche recti fier diodes)，Ambient and case-rated，up to 100A - 英文版
	GB/T 6217-1998 Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section One:Blank detail speci-fication for Ambient-rated bipolar transistors for low and high frequency amplification - 英文版
	GB/T 16894-1997 Blank detail specification for rectifier diodes (including avalanche rectifier diodes)，Ambient and case-rated，for currents greater than 100A - 英文版
	GB/T 15439-1995 Air quality--Determination of benz［a］pyrene in Ambient air--High performance liquid chromatography - 英文版
	GB/T 15438-1995 Ambient air--Determination of ozone--Ultraviolet photometric method - 英文版
	GB/T 15437-1995 Ambient air--Determination of ozone--Indigo disulphonate spectrophotometry - 英文版
	GB/T 15436-1995 Ambient air--Determination of nitrogen oxides--Saltzman method - 英文版
	GB/T 15435-1995 Ambient air--Determination of nitrogen dioxide--Saltzman method - 英文版
	GB/T 15434-1995 Ambient air--Determination of the mass concentration of fluoride--Method by filter sampling andfluorine ion-selective electrode analysis - 英文版
	GB/T 15433-1995 Ambient air--Determination of the fluoride--Method by lime-paper sampling and fluorine ion-selective electrode analysis - 英文版
	GB/T 15432-1995 Ambient air--Determination of total suspended particulates--Gravimetric method - 英文版
	GB/T 15265-1994 Ambient air--Determination of dustfall--Gravimetric method - 英文版
	GB/T 15264-1994 Ambient air--Determination of lead--Flame atomic absorption spectrophotometric method - 英文版
	GB/T 15263-1994 Ambient air--Determination of total hydrocarbons--Gas chromatographic method - 英文版
	GB/T 15262-1994 Ambient air--Determination of sulfur dioxide--Formaldehyde absorbing-pararosaniline spectrophotometry - 英文版
	GB/T 13153-1991 Blank detail specification for gate turn-off thyristors，Ambient or case-rated，5A and above - 英文版
	GB/T 13152-1991 Blank detail specification for reverse conducting triode thyristors，Ambient or case-rated，5A/5A and above - 英文版

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