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	GB/T 18310.18-2001 Fibre optic interconnecting devices and passive components--Basic test and measurement procedures--Part 2-18:Tests--Dry heat--High temperatureendurance - 英文版
	GB/T 18309.1-2001 Fibre optic interconnecting devices and passive components--Basic test and measurement procedures--Part 1:General and guidance - 英文版
	GB/T 18275.2-2000 Specifications for automobile braking transmission device being overhauled--Hydraulic braking - 英文版
	GB/T 18275.1-2000 Specifications for automobile braking transmission device being overhauled--Air braking - 英文版
	GB 18279-2000 Medical devices--Validation androutine control of ethylene oxide sterilization - 英文版
	GB/T 18271.4-2000 Process measurement and control devices--General methods and procedures for evaluating performance--Part 4:Evaluation report content - 英文版
	GB/T 18271.3-2000 Process measurement and control devices--General methods and procedures for evaluating performance--Part 3:Tests for the effects of influence quantities - 英文版
	GB/T 18271.2-2000 Process measurement and control devices--General methods and procedures for evaluating performance--Part 2:Tests under reference conditions - 英文版
	GB/T 18271.1-2000 Process measurement and control devices--General methods and procedures for evaluating performance--Part 1:General considerations - 英文版
	GB/T 3367.3-2000 Glossary of terms for railway locomotive--Names of component parts for diesel locomotive auxiliary device - 英文版
	GB/T 6588-2000 Semiconductor devices--Discrete devices--Part 3:Signal(including switching) and regulator diodes--Section One--Blank detail specification for signal diodes，switching diodes and controlled-avalanche diodes - 英文版
	GB/T 18154-2000 Technical specification of automatic dust explosion suppression devices - 英文版
	GB/T 17006.5-2000 Evaluation and routine testing in medical imaging departments--Part 2-5:Constancytests--Image display devices - 英文版
	GB/T 17192.5-2000 Information technology--Computer graphics--Interfacing techniques for dialogues with graphical devices(CGI)--Functional specification--Part 5:Inputand echoing - 英文版
	GB/T 17192.6-2000 Information technology--Computer graphics--Interfacing techniques for dialogues with graphical devices(CGI)--Functional specification--Part 6:Raster - 英文版
	GB/T 5965-2000 Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits--Section one--Blank detail specification for bipolar monolithic digital integrated circuit gates(excluding uncommitted logic arrays) - 英文版
	GB/T 17940-2000 Semiconductor devices--Integrated circuits--Part 3:Analogue integrated circuits - 英文版
	GB/T 17920-1999 Earth-moving machinery--Lift-arm support devices - 英文版
	GB/T 12560-1999 Semiconductor devices--Sectional specification for discrete devices - 英文版
	GB/T 17726-1999 Small craft--Electrical devices--Protection against ignition of surrounding flammable gases - 英文版
	GB/T 17677-1999 Equipment for crop protection--Antidrip devices--Determination of performance - 英文版
	GB/T 9424-1998 Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits--Section Five:Blank detail specification for complementary MOS digital inte-grated circuits，series 4000B and 4000UB - 英文版
	GB/T 7576-1998 Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section Four:Blank detail specification for case-rated bipolartransistors for high-frequency amplification - 英文版
	GB/T 6590-1998 Semiconductor devices--Discrete devices--Part6:Thyristors--Section Two:Blank detail specification for bidirectional triode thyristors(triacs)，ambient or case-rated，up to 100A - 英文版
	GB/T 6352-1998 Semiconductor devices--Discrete devices--Part 6:Thyristors--Section One:Blank detail specification for reverse blocking triode thyristors，ambient or case-rated，up to 100A - 英文版
	GB/T 6351-1998 Semiconductor devices--Discrete devices--Part 2:Rectifier diodes--Section One:Blank detail specification for rectifier diodes(including avalanche recti fier diodes)，ambient and case-rated，up to 100A - 英文版
	GB/T 6219-1998 Semiconductor devices--Discrete devices--Part 8:Field-effect transistors--Section One:Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz - 英文版
	GB/T 6217-1998 Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section One:Blank detail speci-fication for ambient-rated bipolar transistors for low and high frequency amplification - 英文版
	GB/T 17574-1998 Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits - 英文版
	GB/T 17573-1998 Semiconductor devices--Discrete devices and integrated circuits--Part 1:General - 英文版

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