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GB/T 43493.3-2023 Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 3: Photoluminescence detection method of defects 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第3部分:缺陷的光致发光检测方法 - 中英文版 |
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GB/T 42902-2023 Testing of surface defects of silicon carbide epitaxial wafers Laser scattering method 碳化硅外延片表面缺陷的测试 激光散射法 - 中英文版 |
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GB/T 35308-2017 Epitaxial wafers of germanium based Ⅲ-Ⅴcompounds for solar cell 太阳能电池用锗基Ⅲ-Ⅴ族化合物外延片 - 中英文版 |
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