China Semiconductor single GB Standards Search Result |
1. Ready translated GB standards
and Chinese version GB Standards, you can purchase directly
in the web page; After receive your payment, we will send
the GB Standards PDF file to your Email within 1~3 days.
2. Other English version GB Standards are not ready translated, only after get your order, then we translate them, time usually need 3-5 days . |
GB/T 43967-2024 Space environment - single particle effect pulse laser test method for semiconductor devices for aerospace use 空间环境-宇航用半导体器件单粒子效应脉冲激光试验方法 - 中英文版 |
|||
GB/T 43226-2023 Single-event soft error time domain testing method for semiconductor integrated circuits used in aerospace applications 宇航用半导体集成电路单粒子软错误时域测试方法 - 中英文版 |
|||
GB/T 42676-2023 Testing the quality of Semiconductor single crystals X-ray diffraction method 半导体单晶晶体质量的测试 X射线衍射法 - 中英文版 |
|||
GB/T 1555-2023 Semiconductor single crystal crystal orientation determination method 半导体单晶晶向测定方法 - 中英文版 |
|||
GB/T 1555-2009 Testing methods for determining the orientation of a Semiconductor single crystal 半导体单晶晶向测定方法 - 中英文版 |
|||
GB/T 17574.11-2006 Semiconductor devices - Integrated circuits - Part 2-11: Digital integrated circuits - Blank detail specification for single supply integrated circuit electrically erasable and programmable read-only memory 半导体器件 集成电路 第2-11部分:数字集成电路 单电源集成电路电可擦可编程只读存储器 空白详细规范 - 中英文版 |
|||
GB/T 4326-2006 Extrinsic Semiconductor single crystals measurement of Hall mobility and Hall coefficient 非本征半导体单晶霍尔迁移率和霍尔系数测量方法 - 中英文版 |
|||
GB/T 6219-1998 Semiconductor devices--Discrete devices--Part 8:Field-effect transistors--Section One:Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz 半导体器件 分立器件 第8部分:场效应晶体管 第一篇 1 GHz、5 W以下的单栅场效应晶体管 空白详细规范 - 中英文版 |
Find out:8Items | To Page of: First -Previous-Next -Last | 1 |