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GB/T 10067.417-2023 Basic specifications for electrothermal and electromagnetic treatment devices Part 417: Devices for growing Silicon carbide single crystals 电热和电磁处理装置基本技术条件 第417部分：碳化硅单晶生长装置 - 中英文版 |
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GB/T 30656-2023 Silicon carbide single crystal polished wafer 碳化硅单晶抛光片 - 中英文版 |
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GB/T 42271-2022 Non-contact measurement method for resistivity of semi-insulating Silicon carbide single crystal 半绝缘碳化硅单晶的电阻率非接触测试方法 - 中英文版 |
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GB/T 41765-2022 Test method for dislocation density of Silicon carbide single crystal 碳化硅单晶位错密度的测试方法 - 中英文版 |
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GB/T 41153-2021 Determination of boron, aluminum and nitrogen impurity content in Silicon carbide single crystal -- Secondary ion mass spectrometry 碳化硅单晶中硼、铝、氮杂质含量的测定? 二次离子质谱法 - 中英文版 |
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GB/T 34520.2-2017 Test methods for continuous silicon carbide fiber—Part 2：Diameter of single-filament fiber 连续碳化硅纤维测试方法 第2部分：单纤维直径 - 中英文版 |
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GB/T 34520.5-2017 Test methods for continuous silicon carbide fiber—Part 5：Tensile properties of single-filament fiber 连续碳化硅纤维测试方法 第5部分：单纤维拉伸性能 - 中英文版 |
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