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GB/T 24581-2022 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method 硅单晶中III、V族杂质含量的测定 低温傅立叶变换红外光谱法 - 中英文版 |
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GB/T 30654-2014 Test method for lattice constant of III-nitride epitaxial layers Ⅲ族氮化物外延片晶格常数测试方法 - 中英文版 |
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GB/T 24574-2009 Test methods for photoluminescence analysis of single crystal silicon for III-V impurities 硅单晶中Ⅲ-Ⅴ族杂质的光致发光测试方法 - 中英文版 |
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GB/T 24581-2009 Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities 低温傅立叶变换红外光谱法测量硅单晶中III、V族杂质含量的测试方法 - 中英文版 |
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