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GB/T 43493.3-2023 Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 3: Photoluminescence detection method of defects 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第3部分：缺陷的光致发光检测方法 - 中英文版 |
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GB/T 43313-2023 Testing of surface quality and microtube density of polished silicon carbide wafers by confocal differential interference method 碳化硅抛光片表面质量和微管密度的测试 共焦点微分干涉法 - 中英文版 |
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GB/T 42907-2023 Testing of non-equilibrium carrier recombination lifetime in silicon ingots, silicon blocks and silicon wafers Non-contact eddy current induction method 硅锭、硅块和硅片中非平衡载流子复合寿命的测试 非接触涡流感应法 - 中英文版 |
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GB/T 42905-2023 Testing of Silicon Carbide Epitaxial Layer Thickness Infrared Reflection Method 碳化硅外延层厚度的测试 红外反射法 - 中英文版 |
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GB/T 42902-2023 Testing of surface defects of silicon carbide epitaxial wafers Laser scattering method 碳化硅外延片表面缺陷的测试 激光散射法 - 中英文版 |
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GB/T 6621-2009 Testing methods for surface flatness of silicon slices 硅片表面平整度测试方法 - 中英文版 |
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GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques 硅晶体完整性化学择优腐蚀检验方法 - 中英文版 |
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GB/T 14144-2009 Testing method for determination of radial interstitial oxygen variation in silicon 硅晶体中间隙氧含量径向变化测量方法 - 中英文版 |
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