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	GB/T 43493.1-2023 Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 1: Defect classification 半导体器件功率器件用碳化硅同质外延片缺陷的无损检测识别判据第1部分：缺陷分类 - 英文版
	GB/T 42905-2023 Testing of Silicon Carbide Epitaxial Layer Thickness Infrared Reflection Method 碳化硅外延层厚度的测试红外反射法 - 英文版
	GB/T 42902-2023 Testing of surface defects of silicon carbide epitaxial wafers Laser scattering method 碳化硅外延片表面缺陷的测试激光散射法 - 英文版
	GB/T 14146-2021 Test method for carrier concentration of Silicon epitaxial layers - Capacitance-voltage method 硅外延层载流子浓度的测试电容-电压法 - 英文版
	GB/T 14142-2017 Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique 硅外延层晶体完整性检验方法腐蚀法 - 英文版
	GB/T 30652-2014 Trichlorosilane for silicon epitaxial 硅外延用三氯氢硅 - 英文版
	GB/T 14863-2013 Method for net carrier density in Silicon epitaxial layers by voltage-capacitance of gated and ungated diodes 用栅控和非栅控二极管的电压电容关系测定硅外延层中净载流子浓度的方法 - 英文版
	GB/T 14847-2010 Test mothod for thickness of lightly doped Silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance 重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法 - 英文版
	GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method 硅外延层载流子浓度测定汞探针电容-电压法 - 英文版
	GB/T 14141-2009 Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array 硅外延层、扩散层和离子注入层薄层电阻的测定直排四探针法 - 英文版

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