China Silicon carbide crys GB Standards Search Result

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	GB/T 43612-2023 Silicon carbide crystal material defect map 碳化硅晶体材料缺陷图谱 - 英文版
	GB/T 10067.417-2023 Basic specifications for electrothermal and electromagnetic treatment devices Part 417: Devices for growing silicon carbide single crystals 电热和电磁处理装置基本技术条件第417部分：碳化硅单晶生长装置 - 英文版
	GB/T 30656-2023 Silicon carbide single crystal polished wafer 碳化硅单晶抛光片 - 英文版
	GB/T 42271-2022 Non-contact measurement method for resistivity of semi-insulating silicon carbide single crystal 半绝缘碳化硅单晶的电阻率非接触测试方法 - 英文版
	GB/T 41765-2022 Test method for dislocation density of silicon carbide single crystal 碳化硅单晶位错密度的测试方法 - 英文版
	GB/T 41153-2021 Determination of boron, aluminum and nitrogen impurity content in silicon carbide single crystal -- Secondary ion mass spectrometry 碳化硅单晶中硼、铝、氮杂质含量的测定? 二次离子质谱法 - 英文版
	GB/T 32278-2015 Test methods for flatness of monocrystalline silicon carbide wafers 碳化硅单晶片平整度测试方法 - 英文版
	GB/T 31351-2014 Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers 碳化硅单晶抛光片微管密度无损检测方法 - 英文版
	GB/T 30656-2014 Polished monocrystalline silicon carbide wafers 碳化硅单晶抛光片 - 英文版
	GB/T 30868-2014 Test method for measuring micropipe density of monocrystalline silicon carbide wafers―Chemically etching 碳化硅单晶片微管密度的测定化学腐蚀法 - 英文版
	GB/T 30867-2014 Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers 碳化硅单晶片厚度和总厚度变化测试方法 - 英文版
	GB/T 30866-2014 Test method for measuring diameter of monocrystalline silicon carbide wafers 碳化硅单晶片直径测试方法 - 英文版

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