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GB/T 43493.3-2023 Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 3: Photoluminescence detection method of defects 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第3部分：缺陷的光致发光检测方法 - 英文版 |
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GB/T 43493.2-2023 Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 2: Optical detection methods for defects 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第2部分：缺陷的光学检测方法 - 英文版 |
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GB/T 43493.1-2023 Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 1: Defect classification 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第1部分：缺陷分类 - 英文版 |
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GB/T 42902-2023 Testing of surface defects of silicon carbide epitaxial wafers Laser scattering method 碳化硅外延片表面缺陷的测试 激光散射法 - 英文版 |
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GB/T 14139-2019 Silicon epitaxial wafers 硅外延片 - 英文版 |
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GB/T 35310-2017 200mm Silicon epitaxial wafer 200mm硅外延片 - 英文版 |
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GB/T 14139-2009 Silicon epitaxial wafers 硅外延片 - 英文版 |
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GB/T 14015-1992 Silicon on sapphire epitaxial wafers 硅-蓝宝石外延片 - 英文版 |
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