|
NATIONAL STANDARD OF THE PEOPLE'S REPUBLIC OF CHINA
|
GB/T 29332-2012
|
|
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors(IGBT) |
|
|
|
Issued Date: |
|
Implemented Date: |
|
Issued by: |
|
The Standardization Administration of the People's Republic of China |
|
|
|
|
Thanks for your interest in
"GB/T 29332-2012" standard !
This GB standard english version is not ready translated, only after get your order, then we translate it, time usually need more 3-5 days .
|
|
GB Standard Code |
GB/T 29332-2012 |
Standard Category |
China National Standards |
GB Standard English Title |
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors(IGBT) |
GB Standard Chinese Title |
半导体器件 分立器件 第9部分:绝缘栅双极晶体管(IGBT) |
Chinese Version Price |
$5.00 per page |
English Translation Fee |
About $15~$30 per 1 page (1,000 words) |
Sale Price
(30~50% off) |
Inquire us for detail price
|
|